DocumentNumber:MD7IC2251N FreescaleSemiconductor Rev.0,5/2012 TechnicalData RFLDMOSWidebandIntegrated PowerAmplifiers MD7IC2251NR1 The MD7IC2251N wideband integrated circuit is designed with on--chip MD7IC2251GNR1 matchingthatmakesit usablefrom2110--2170MHz. Thismulti--stage structure is rated for 26 to 32 volt operation and covers all typical cellular base station modulation formats. TypicalDoherty Single--Carrier W--CDMA CharacterizationPerformance: V =28Volts,I =80mA,I = 260mA, V =1.4Vdc, 2110--2170MHz,12WAVG.,28V DD DQ1(A+B) DQ2A GS2B P = 12Watts Avg., IQ MagnitudeClipping, ChannelBandwidth= 3.84MHz, SINGLEW--CDMA out Input SignalPAR = 9.9dB 0.01%Probability onCCDF. RFLDMOSWIDEBAND INTEGRATEDPOWERAMPLIFIERS G PAE OutputPAR ACPR ps Frequency (dB) (%) (dB) (dBc) 2110MHz 28.8 38.2 7.1 --34.6 TO--270WB--14 PLASTIC 2140MHz 29.0 37.9 7.1 --36.2 MD7IC2251NR1 2170MHz 29.2 37.4 6.9 --36.1 Capableof Handling10:1VSWR, 32Vdc, 2140MHz, 63Watts CW Output Power (3dB Input Overdrivefrom RatedP ) out TO--270WB--14GULL (1) Typical P 3dB CompressionPoint 58Watts out PLASTIC Features MD7IC2251GNR1 100%PAR Testedfor GuaranteedOutput Power Capability ProductionTestedinaSymmetricalDoherty Configuration CharacterizedwithLarge--SignalLoad--PullParameters andCommonSourceS--Parameters On--ChipMatching(50Ohm Input, DC Blocked) (2) IntegratedQuiescent Current TemperatureCompensationwithEnable/DisableFunction IntegratedESD Protection 225C CapablePlastic Package InTapeandReel. R1Suffix = 500Units, 44mm TapeWidth, 13inchReel. V DS1A (3) Carrier CARRIER V 1 DS1A V 2 GS2A RF RF /V inA out1 DS2A 14 V 3 GS1A RF /V out1 DS2A RF 4 inA NC 5 NC 6 V GS1A QuiescentCurrent NC 7 (2) V TemperatureCompensation GS2A NC 8 RF 9 13 RF /V inB out2 DS2B V GS1B QuiescentCurrent V 10 GS1B (2) V TemperatureCompensation V 11 GS2B GS2B V 12 Peaking DS1B (3) PEAKING (TopView) RF inB RF /V out2 DS2B Note: Exposed backside of the package is V thesourceterminalforthetransistors. DS1B Figure1.FunctionalBlockDiagram Figure2.PinConnections 1. P3dB=P +7.0dBwhereP istheaverageoutputpowermeasuredusinganunclippedW--CDMAsingle--carrierinputsignalwhereoutput avg avg PARis compressedto7.0dB 0.01%probability onCCDF. 2. RefertoAN1977,QuiescentCurrentThermalTrackingCircuitintheRFIntegratedCircuitFamilyandtoAN1987,QuiescentCurrentControl fortheRFIntegratedCircuitDeviceFamily.GotoTable1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V --0.5,+65 Vdc DS Gate--SourceVoltage V --0.5,+10 Vdc GS OperatingVoltage V 32,+0 Vdc DD StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperature T 150 C C (1,2) OperatingJunctionTemperature T 225 C J InputPower P 28 dBm in Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit FinalDohertyApplication ThermalResistance,JunctiontoCase R C/W JC CaseTemperature78C,P =12WCW out Stage1,28Vdc,I =80mA 4.8 DQ1(A+B) Stage2,28Vdc,I =260mA,V =1.4Vdc 1.5 DQ2A GS2B CaseTemperature89C,P =50WCW out Stage1,28Vdc,I =80mA 3.7 DQ1(A+B) Stage2,28Vdc,I =260mA,V =1.4Vdc 1.0 DQ2A GS2B Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 1A MachineModel(perEIA/JESD22--A115) A ChargeDeviceModel(perJESD22--C101) II Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit (4) Stage1 -- OffCharacteristics ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =65Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 1 Adc DSS (V =28Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 1 Adc GSS (V =1.5Vdc,V =0Vdc) GS DS (4) Stage1 -- OnCharacteristics GateThresholdVoltage V 1.2 2.0 2.7 Vdc GS(th) (V =10Vdc,I =23 Adc) DS D GateQuiescentVoltage V 2.7 Vdc GS(Q) (V =28Vdc,I =80mAdc) DS DQ1(A+B) FixtureGateQuiescentVoltage V 6.0 7.0 8.0 Vdc GG(Q) (V =28Vdc,I =80mAdc,MeasuredinFunctionalTest) DD DQ1(A+B) 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. MTTFcalculatoravailableat