X-On Electronics has gained recognition as a prominent supplier of MHT1000HR5 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. MHT1000HR5 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

MHT1000HR5 NXP

MHT1000HR5 electronic component of NXP
Images are for reference only
See Product Specifications
Part No. MHT1000HR5
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: RF MOSFET Transistors MOSFET 2450 MHz 140 W 28 V
Datasheet: MHT1000HR5 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 157.9592
5 : USD 154.8902
10 : USD 154.0149
25 : USD 147.4916
50 : USD 145.4611
100 : USD 145.3094
250 : USD 145.3094
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Operating Frequency
Gain
Output Power
Configuration
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Brand
Factory Pack Quantity :
Type
Number Of Channels
Channel Mode
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Vgs Th - Gate-Source Threshold Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MHT1000HR5 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MHT1000HR5 and other electronic components in the RF MOSFET Transistors category and beyond.

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DocumentNumber:MHT1000H FreescaleSemiconductor Rev. 0, 5/2014 TechnicalData RFPowerLDMOSTransistor N--Channel Enhancement--Mode Lateral MOSFET MHT1000HR5 RF power transistor suitable for industrial heating applications operating at 2450MHz. Deviceis capableof bothCW andpulseoperation. TypicalCW Performanceat 2450MHz, V =28Vdc,I = 1200mA, DD DQ 2450MHz,140WCW,28V P = 140W out INDUSTRIALHEATING,RUGGED Power Gain 13.2dB DrainEfficiency 45% RFPOWERLDMOSTRANSISTOR Capableof Handling10:1VSWR, 28Vdc, 2390MHz, 140W CW Output Power Features CharacterizedwithSeries Equivalent Large--SignalImpedanceParameters Internally Matchedfor Easeof Use QualifieduptoaMaximum of 32V Operation DD IntegratedESD Protection InTapeandReel. R5Suffix = 50Units per 56mm TapeWidth, 13--inchReel. NI--880H--2L Gate21 Drain (TopView) Note: The backside of the package is the sourceterminalforthetransistor. Figure1.PinConnections Table1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V --0.5,+68 Vdc DSS Gate--SourceVoltage V --0.5,+12 Vdc GS StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperature T 150 C C (1,2) OperatingJunctionTemperature T 225 C J Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R 0.29 C/W JC CaseTemperature82C,140W CW 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. MTTFcalculatoravailableatTable3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 1C MachineModel(perEIA/JESD22--A115) A ChargeDeviceModel(perJESD22--C101) III Table4.ElectricalCharacteristics (T =25 Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =68Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 1 Adc DSS (V =28Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 500 nAdc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics GateThresholdVoltage V 1 2 3 Vdc GS(th) (V =10Vdc,I =300 Adc) DS D GateQuiescentVoltage V 2 2.8 4 Vdc GS(Q) (V =28Vdc,I =1300mAdc,MeasuredinFunctionalTest) DD D Drain--SourceOn--Voltage V 0.1 0.21 0.3 Vdc DS(on) (V =10Vdc,I =3Adc) GS D (1) DynamicCharacteristics ReverseTransferCapacitance C 2 pF rss (V =28Vdc 30mV(rms)ac 1MHz,V =0Vdc) DS GS FunctionalTests(InFreescaleTestFifxture,50ohmsystem)V =28Vdc,I =1300mA,P =28W Avg.,f=2390MHz,2--Carrier DD DQ out W--CDMA,3.84MHz ChannelBandwidthCarriers.ACPRmeasuredin3.84MHz ChannelBandwidth 5MHz Offset.IM3measuredin 3.84MHz Bandwidth 10MHz Offset.InputSignalPAR=8.5dB 0.01%Probability onCCDF. PowerGain G 13 15.2 17 dB ps DrainEfficiency 23 25 % D IntermodulationDistortion IM3 --37 --35 dBc AdjacentChannelPowerRatio ACPR --40 --38 dBc InputReturnLoss IRL --15 dB 1. Partinternally matchedbothoninputandoutput. MHT1000HR5 RF DeviceData FreescaleSemiconductor, Inc. 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
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PH3
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