DocumentNumber:MHT1000H FreescaleSemiconductor Rev. 0, 5/2014 TechnicalData RFPowerLDMOSTransistor N--Channel Enhancement--Mode Lateral MOSFET MHT1000HR5 RF power transistor suitable for industrial heating applications operating at 2450MHz. Deviceis capableof bothCW andpulseoperation. TypicalCW Performanceat 2450MHz, V =28Vdc,I = 1200mA, DD DQ 2450MHz,140WCW,28V P = 140W out INDUSTRIALHEATING,RUGGED Power Gain 13.2dB DrainEfficiency 45% RFPOWERLDMOSTRANSISTOR Capableof Handling10:1VSWR, 28Vdc, 2390MHz, 140W CW Output Power Features CharacterizedwithSeries Equivalent Large--SignalImpedanceParameters Internally Matchedfor Easeof Use QualifieduptoaMaximum of 32V Operation DD IntegratedESD Protection InTapeandReel. R5Suffix = 50Units per 56mm TapeWidth, 13--inchReel. NI--880H--2L Gate21 Drain (TopView) Note: The backside of the package is the sourceterminalforthetransistor. Figure1.PinConnections Table1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V --0.5,+68 Vdc DSS Gate--SourceVoltage V --0.5,+12 Vdc GS StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperature T 150 C C (1,2) OperatingJunctionTemperature T 225 C J Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R 0.29 C/W JC CaseTemperature82C,140W CW 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. MTTFcalculatoravailableatTable3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 1C MachineModel(perEIA/JESD22--A115) A ChargeDeviceModel(perJESD22--C101) III Table4.ElectricalCharacteristics (T =25 Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =68Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 1 Adc DSS (V =28Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 500 nAdc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics GateThresholdVoltage V 1 2 3 Vdc GS(th) (V =10Vdc,I =300 Adc) DS D GateQuiescentVoltage V 2 2.8 4 Vdc GS(Q) (V =28Vdc,I =1300mAdc,MeasuredinFunctionalTest) DD D Drain--SourceOn--Voltage V 0.1 0.21 0.3 Vdc DS(on) (V =10Vdc,I =3Adc) GS D (1) DynamicCharacteristics ReverseTransferCapacitance C 2 pF rss (V =28Vdc 30mV(rms)ac 1MHz,V =0Vdc) DS GS FunctionalTests(InFreescaleTestFifxture,50ohmsystem)V =28Vdc,I =1300mA,P =28W Avg.,f=2390MHz,2--Carrier DD DQ out W--CDMA,3.84MHz ChannelBandwidthCarriers.ACPRmeasuredin3.84MHz ChannelBandwidth 5MHz Offset.IM3measuredin 3.84MHz Bandwidth 10MHz Offset.InputSignalPAR=8.5dB 0.01%Probability onCCDF. PowerGain G 13 15.2 17 dB ps DrainEfficiency 23 25 % D IntermodulationDistortion IM3 --37 --35 dBc AdjacentChannelPowerRatio ACPR --40 --38 dBc InputReturnLoss IRL --15 dB 1. Partinternally matchedbothoninputandoutput. MHT1000HR5 RF DeviceData FreescaleSemiconductor, Inc. 2