MMBTA42@215 NXP

DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBTA42 NPN high-voltage transistor Product specication 2000 Apr 11Philips Semiconductors Product specication NPN high-voltage transistor MMBTA42 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION High voltage (max. 300 V). 1 base 2 emitter APPLICATIONS 3 collector Telephony Professional communication equipment. handbook, halfpage DESCRIPTION 3 3 NPN high-voltage transistor in a SOT23 plastic package. PNP complement: MMBTA92. 1 MARKING 2 1 2 (1) TYPE NUMBER MARKING CODE Top view MAM255 MMBTA42 7D* Note Fig.1 Simplified outline (SOT23) and symbol. 1. * = p: made in Hong Kong. * = t: made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter - 300 V CBO V collector-emitter voltage open base - 300 V CEO V emitter-base voltage open collector - 6V EBO I collector current (DC) - 100 mA C I peak collector current - 200 mA CM I peak base current - 100 mA BM P total power dissipation T 25 C note 1 - 250 mW tot amb T storage temperature - 65 +150 C stg T junction temperature - 150 C j T operating ambient temperature - 65 +150 C amb Note 1. Transistor mounted on an FR4 printed-circuit board. 2000 Apr 11 2