X-On Electronics has gained recognition as a prominent supplier of MMBTA42@215 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMBTA42@215 Bipolar Transistors - BJT are a product manufactured by NXP. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MMBTA42@215 NXP

MMBTA42@215 electronic component of NXP
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Part No.MMBTA42@215
Manufacturer: NXP
Category: Bipolar Transistors - BJT
Description: Trans GP BJT NPN 300V 0.1A Automotive 3-Pin TO-236AB T/R
Datasheet: MMBTA42@215 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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We are delighted to provide the MMBTA42@215 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBTA42@215 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBTA42 NPN high-voltage transistor Product specication 2000 Apr 11Philips Semiconductors Product specication NPN high-voltage transistor MMBTA42 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION High voltage (max. 300 V). 1 base 2 emitter APPLICATIONS 3 collector Telephony Professional communication equipment. handbook, halfpage DESCRIPTION 3 3 NPN high-voltage transistor in a SOT23 plastic package. PNP complement: MMBTA92. 1 MARKING 2 1 2 (1) TYPE NUMBER MARKING CODE Top view MAM255 MMBTA42 7D* Note Fig.1 Simplified outline (SOT23) and symbol. 1. * = p: made in Hong Kong. * = t: made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter - 300 V CBO V collector-emitter voltage open base - 300 V CEO V emitter-base voltage open collector - 6V EBO I collector current (DC) - 100 mA C I peak collector current - 200 mA CM I peak base current - 100 mA BM P total power dissipation T 25 C note 1 - 250 mW tot amb T storage temperature - 65 +150 C stg T junction temperature - 150 C j T operating ambient temperature - 65 +150 C amb Note 1. Transistor mounted on an FR4 printed-circuit board. 2000 Apr 11 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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