PBSS5350D/DG,115 NXP

PBSS5350D 50 V, 3 A PNP low VCEsat (BISS) transistor Rev. 6 28 June 2011 Product data sheet 1. Product profile 1.1 General description PNP low V Breakthrough In Small Signal (BISS) transistor in a small CEsat SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4350D 1.2 Features and benefits Low collector-emitter saturation AEC-Q101 qualified voltage V CEsat Smaller Printed-Circuit Board (PCB) High current capability area than for conventional transistors High efficiency due to less heat generation 1.3 Applications Supply line switching circuits DC-to-DC conversion Battery management applications 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - -50 V CEO voltage I collector current - - -3 A C I peak collector current - - -5 A CM R collector-emitter I =-2A I = -200 mA pulsed - 120 150 m CEsat C B saturation resistance t 300 s 0.02 T =25C p amb SOT457PBSS5350D NXP Semiconductors 50 V, 3 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 C collector 6 5 4 1, 2, 5, 6 2 C collector 3 B base 3 4E emitter 132 4 5 C collector SOT457 (TSOP6) sym030 6 C collector 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS5350D TSOP6 plastic surface-mounted package (TSOP6) 6 leads SOT457 4. Marking Table 4. Marking codes Type number Marking code PBSS5350D 53 PBSS5350D All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 6 28 June 2011 2 of 12