PHE13007,127 NXP

DISCRETE SEMICONDUCTORS DATA SHEET PHE13007 Silicon Diffused Power Transistor Product specification February 1999NXP Semiconductors Product specification Silicon Diffused Power Transistor PHE13007 GENERAL DESCRIPTION The PHE13007 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V Collector-emitter voltage peak value V = 0 V - 700 V CESM BE V Collector-Base voltage (open emitter) - 700 V CBO V Collector-emitter voltage (open base) - 400 V CEO V Emitter-Base voltage (I = 0) - 9 V EBO B I Collector current (DC) - 8 A C I Collector current peak value - 16 A CM P Total power dissipation T 25 C - 80 W tot mb V Collector-emitter saturation voltage I = 5.0 A I = 1.0 A 0.35 2.0 V CEsat C B t Fall time I = 5 A I = 1 A 40 120 ns f C B1 PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION c tab 1 base 2 collector b 3 emitter tab collector 123 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V Collector to emitter voltage V = 0 V - 700 V CESM BE V Collector to emitter voltage (open base) - 400 V CEO V Collector to base voltage (open emitter) - 700 V CBO V Emitter-Base voltage (I = 0) - 9 V EBO B I Collector current (DC) - 8 A C I Collector current peak value - 16 A CM I Base current (DC) - 4 A B I Base current peak value - 8 A BM P Total power dissipation T 25 C - 80 W tot mb T Storage temperature -65 150 C stg T Junction temperature - 150 C j THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT R Junction to mounting base - 1.56 K/W th j-mb R Junction to ambient in free air 60 - K/W th j-a February 1999 1 Rev 1.000