PHE13009/DG,127 NXP

Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor PHE13009 GENERAL DESCRIPTION The PHE13009 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V Collector-emitter voltage peak value V = 0 V - 700 V CESM BE V Collector-Base voltage (open emitter) - 700 V CBO V Collector-emitter voltage (open base) - 400 V CEO I Collector current (DC) - 12 A C I Collector current peak value - 24 A CM P Total power dissipation T 25 C - 80 W tot mb V Collector-emitter saturation voltage I = 5.0 A I = 1.0 A 0.32 1.0 V CEsat C B h I = 5.0 A V = 5 V - 40 FEsat C CE t Fall time I = 5.0 A I = 1.0 A 0.1 0.5 s f C B1 PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION c tab 1 base 2 collector b 3 emitter tab collector e 123 LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V Collector to emitter voltage V = 0 V - 700 V CESM BE V Collector to emitter voltage (open base) - 400 V CEO V Collector to base voltage (open emitter) - 700 V CBO I Collector current (DC) - 12 A C I Collector current peak value - 24 A CM I Base current (DC) - 6 A B I Base current peak value - 12 A BM P Total power dissipation T 25 C - 80 W tot mb T Storage temperature -65 150 C stg T Junction temperature - 150 C j THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT R Junction to mounting base - 1.56 K/W th j-mb R Junction to ambient in free air 60 - K/W th j-a March 1999 1 Rev 1.000Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor PHE13009 STATIC CHARACTERISTICS T = 25 C unless otherwise specified mb SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT 1 I ,I Collector cut-off current V = 0 V V = V - - 1.0 mA CES CBO BE CE CESMmax I V = 0 V V = V - - 5.0 mA CES BE CE CESMmax T = 125 C j I Collector cut-off current V = V (400V) - - 0.1 mA CEO CEO CEOMmax I Emitter cut-off current V = 9 V I = 0 A - - 1 mA EBO EB C V Collector-emitter sustaining voltage I = 0 A I = 10 mA 400 - - V CEOsust B C L = 25 mH Collector-emitter saturation voltage I = 5.0 A I = 1.0 A - 0.32 1.0 V V CEsat C B I = 8.0 A I = 1.6 A - - 2.0 V C B V Base-emitter saturation voltage I = 5.0 A I = 1.0 A - 1.0 1.3 V BEsat C B I = 8.0 A I = 1.6 A - 1.1 1.6 V C B h DC current gain I = 5.0 A V = 5 V 8 - 40 FE C CE h I = 8.0 A V = 5 V 6 - 30 FEsat C CE DYNAMIC CHARACTERISTICS T = 25 C unless otherwise specified mb SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Switching times (resistive load) I = 5 A I = -I = 1 A Con Bon Boff R = 75 ohms V = 4 V L BB2 t Turn-off storage time 2.2 3.3 s s t Turn-off fall time 0.26 0.7 s f Switching times (inductive load) I = 5 A I = 1 A L = 1 H Con Bon B -V = 5 V BB t Turn-off storage time 1.35 2.3 s s t Turn-off fall time 0.1 0.5 s f Switching times (inductive load) I = 5A I = 1 A L = 1 H Con Bon B -V = 5 V T = 100 C BB j t Turn-off storage time - 3.2 s s t Turn-off fall time - 0.9 s f 1 Measured with half sine-wave voltage (curve tracer). March 1999 2 Rev 1.000