PMCM4401VNE NXP

PMCM4401VNE 12V, N-channel Trench MOSFET 24 July 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Ultra small package: 0.78 0.78 0.35 mm Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 12 V DS j V gate-source voltage -8 - 8 V GS I drain current V = 4.5 V T = 25 C t 5 s 1 - - 6 A D GS amb Static characteristics R drain-source on-state V = 4.5 V I = 3 A T = 25 C - 36 42 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm . Scan or click this QR code to view the latest information for this product WLCSP4NXP Semiconductors PMCM4401VNE 12V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 2 D A1 G gate A2 S source A B1 D drain G B2 S source B S Transparent top view 017aaa255 WLCSP4 (OL- PMCM4401VNE) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMCM4401VNE WLCSP4 WLCSP4: wafer level chip-size package 4 bumps OL-PMCM4401VNE (2 x 2) 7. Marking Table 4. Marking codes Type number Marking code PMCM4401VNE P 2 PIN A1 INDICATION MARKING CODE 1 (EXAMPLE) A B Top view, balls down aaa-012880 Fig. 1. WLCSP4 marking code description PMCM4401VNE All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2015. All rights reserved Product data sheet 24 July 2015 2 / 15