X-On Electronics has gained recognition as a prominent supplier of PMEM4010ND,115 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PMEM4010ND,115 Bipolar Transistors - BJT are a product manufactured by NXP. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PMEM4010ND,115 NXP

PMEM4010ND,115 electronic component of NXP
PMEM4010ND,115 NXP
PMEM4010ND,115 Bipolar Transistors - BJT
PMEM4010ND,115  Semiconductors

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See Product Specifications
Part No. PMEM4010ND,115
Manufacturer: NXP
Category: Bipolar Transistors - BJT
Description: Trans GP BJT NPN 40V 1A 6-Pin TSOP T/R
Datasheet: PMEM4010ND,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
8: USD 4.2516 ea
Line Total: USD 34.01 
Availability - 0
MOQ: 8  Multiples: 1
Pack Size: 1
   
Manufacturer
Product Category
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
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We are delighted to provide the PMEM4010ND,115 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMEM4010ND,115 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D302 PMEM4010ND NPN transistor/Schottky diode module Product data sheet 2003 Jul 04 Supersedes data of 2002 Oct 28NXP Semiconductors Product data sheet NPN transistor/Schottky diode module PMEM4010ND FEATURES PINNING 600 mW total power dissipation PIN DESCRIPTION High current capability 1 emitter Reduces required PCB area 2 not connected Reduced pick and place costs 3 cathode Small plastic SMD package. 4 anode 5 base Transistor: 6 collector Low collector-emitter saturation voltage. Diode: Ultra high-speed switching Very low forward voltage handbook, halfpage 6 5 4 Guard ring protected. 4 3 6 APPLICATIONS 5 1 DC/DC convertors 132 MGU865 Inductive load drivers General purpose load drivers Reverse polarity protection circuits. Marking code: B3. Fig.1 Simplified outline (SOT457) and symbol. DESCRIPTION Combination of an NPN transistor with low V and high CEsat current capability and a planar Schottky barrier diode with an integrated guard ring for stress protection in a SOT457 (SC-74) small plastic package. PNP complement: PMEM4010PD. 2003 Jul 04 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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