X-On Electronics has gained recognition as a prominent supplier of 12A02MH-TL-E Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 12A02MH-TL-E Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

12A02MH-TL-E ON Semiconductor

12A02MH-TL-E electronic component of ON Semiconductor
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Part No.12A02MH-TL-E
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 12 V 1 A 450MHz 600 mW Surface Mount 3-MCPH
Datasheet: 12A02MH-TL-E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.1206
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.5331
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.5331
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.5949
10 : USD 0.4846
100 : USD 0.2608
500 : USD 0.1978
1000 : USD 0.155
3000 : USD 0.1285
N/A

Obsolete
   
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We are delighted to provide the 12A02MH-TL-E from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 12A02MH-TL-E and other electronic components in the Bipolar Transistors - BJT category and beyond.

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LOT No. LOT No. Ordering number : EN7483A 12A02MH Bipolar Transistor 12A02MH Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V = --12V, I =0A --100 nA CBO CB E Emitter Cutoff Current I V = --4V, I =0A --100 nA EBO EB C DC Current Gain h V = --2V, I = --10mA 300 700 FE CE C Gain-Bandwidth Product f V = --2V, I = --50mA 450 MHz T CE C Output Capacitance Cob V = --10V, f=1MHz 6 pF CB Collector-to-Emitter Saturation Voltage V (sat) I = --400mA, I = --20mA --120 --240 mV CE C B Base-to-Emitter Saturation Voltage V (sat) I = --400mA, I = --20mA --0.9 --1.2 V BE C B Collector-to-Base Breakdown Voltage V I = --10 A, I =0A --15 V (BR)CBO C E Collector-to-Emitter Breakdown Voltage V I = --1mA, R = --12 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I = --10A, I =0A --5 V (BR)EBO E C Turn-ON Time t 30 ns on Storage Time t See speci ed Test Circuit. 75 ns stg Fall Time t 15 ns f Switching Time Test Circuit I B1 PW=20 s OUTPUT D.C.1% I B2 INPUT R V B R R L 50 ++ 220 F 470 F V =5V V = --5V BE CC I =20I = --20I = --400mA C B1 B2 Ordering Information Device Package Shipping memo 12A02MH-TL-E MCPH3 3,000pcs./reel Pb Free I -- V I -- V C CE C BE --1000 --1200 V = --2V CE --900 --1000 --800 --700 --800 --600 --600 --500 --400 --400 --300 --200 --200 --100 I =0mA B 0 0 0 --100 --200 --300 --400 --500 --600 --700 --800 --900 --1000 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Collector-to-Emitter Voltage, V -- mV IT05094 Base-to-Emitter Voltage, V -- V IT05095 CE BE No.7483-2/6 --0.5mA --1mA --3mA --2mA --5mA --7mA --10mA --15mA --20mA --30mA Ta=75C 25C --25C Collector Current, I -- mA C Collector Current, I -- mA C

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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