15GN03CA-TB-E ON Semiconductor

LOT No. LOT No. Ordering number : ENA1106A 15GN03CA RF Transistor 15GN03CA Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =10V, I =0A 0.1 A CBO CB E Emitter Cutoff Current I V =2V, I =0A 1 A EBO EB C DC Current Gain h V =5V, I =10mA 100 180 FE CE C Gain-Bandwidth Product f V =5V, I =20mA 1.0 1.5 GHz T CE C Output Capacitance Cob 0.95 1.25 pF V =10V, f=1MHz CB Reverse Transfer Capacitance Cre 0.65 pF 2 Forward Transfer Gain S21e V =5V, I =20mA, f=0.4GHz 10 13 dB CE C Noise Figure NF V =3V, I =2mA, f=0.4GHz 1.6 dB CE C Ordering Information Device Package Shipping memo 15GN03CA-TB-E CP 3,000pcs./reel Pb Free I -- V I -- V C CE C BE 100 80 V =5V CE 90 70 80 60 70 50 60 50 40 40 30 30 20 20 10 10 I =0mA B 0 0 02468 10 0 0.2 0.4 0.6 0.8 1.0 1.2 Collector-to-Emitter Voltage, V -- V IT08087 Base-to-Emitter Voltage, V -- V IT08088 CE BE h -- I f -- I FE C T C 3 3 V =5V V =5V CE CE 2 2 1.0 100 7 7 5 5 23 5 7 23 5 7 23 5 7 23 5 7 1.0 10 100 1.0 10 100 Collector Current, I -- mA IT08089 Collector Current, I -- mA IT08090 C C No. A1106-2/8 0.1mA 0.2mA 0.3mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA DC Current Gain, h Collector Current, I -- mA FE C Gain-Bandwidth Product, f -- GHz Collector Current, I -- mA T C