2N2219ALJANTX ON Semiconductor

2N2219, 2N2219A, 2N2219AL Small Signal Switching Transistor NPN Silicon 2N2219, 2N2219A, 2N2219AL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage V Vdc (BR)CEO (I = 10 mAdc) 2N2219 30 E 2N2219A/AL 50 EmitterBase Cutoff Current I EBO (V = 5.0 Vdc) 2N2219 10 Adc EB (V = 6.0 Vdc) 2N2219A/AL 10 Adc EB (V = 4.0 Vdc) All 10 nAdc EB CollectorEmitter Cutoff Current I CES (V = 30 Vdc) 2N2219 10 nAdc CE (V = 50 Vdc) 2N2219A/AL 10 nAdc CE CollectorBase Cutoff Current I CBO (V = 50 Vdc) 2N2219 10 nAdc CB (V = 60 Vdc) 2N2219 10 Adc CB (V = 60 Vdc) 2N2219A/AL 10 nAdc CB (V = 75 Vdc) 2N2219A/AL 10 Adc CB ON CHARACTERISTICS (Note 1) DC Current Gain h FE (I = 0.1 mAdc, V = 10 Vdc) 2N2219 35 C CE 2N2219A/AL 50 (I = 1.0 mAdc, V = 10 Vdc) 2N2219 50 325 C CE 2N2219A/AL 75 325 (I = 10 mAdc, V = 10 Vdc) 2N2219 75 C CE 2N2219A/AL 100 (I = 150 mAdc, V = 10 Vdc) 2N2219/A/AL 100 300 C CE (I = 500 mAdc, V = 10 Vdc) 2N2219/A/AL 30 C CE Collector Emitter Saturation Voltage V Vdc CE(sat) (I = 150 mAdc, I = 15 mAdc) 2N2219 0.4 C B 2N2219A/AL 0.3 (I = 500 mAdc, I = 50 mAdc) 2N2219 1.6 C B 2N2219A/AL 1.0 Base Emitter Saturation Voltage V Vdc BE(sat) (I = 150 mAdc, I = 15 mAdc) 2N2219 0.6 1.3 C B 2N2219A/AL 0.6 1.2 (I = 500 mAdc, I = 50 mAdc) 2N2219 2.6 C B 2N2219A/AL 2.0 SMALLSIGNAL CHARACTERISTICS Magnitude of SmallSignal Current Gain h fe (I = 20 mAdc, V = 20 Vdc, f = 100 MHz) 2.5 12 C CE SmallSignal Current Gain h fe (I = 1.0 mAdc, V = 10 Vdc, f = 1 kHz) 2N2219 50 C CE 2N2219A/AL 75 Output Capacitance C pF obo (V = 10 Vdc, I = 0, 100 kHz f 1.0 MHz) 8.0 CB E Input Capacitance C pF ibo (V = 0.5 Vdc, I = 0, 100 kHz f 1.0 MHz) 25 EB C SWITCHING CHARACTERISTICS TurnOn Time t ns on (Reference Figure in MILPRF19500/251) 2N2219 40 2N2219A/AL 35 Turn Off Time t ns off (Reference Figure in MILPRF19500/251) 2N2219 250 2N2219A/AL 300 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%.