2N3055AG (NPN), MJ15015G (NPN), MJ15016G (PNP) Complementary Silicon High-Power Transistors 2N3055AG (NPN), MJ15015G (NPN), MJ15016G (PNP) ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS (Note 2) CollectorEmitter Sustaining Voltage (Note 3) 2N3055AG V 60 Vdc CEO(sus) (I = 200 mAdc, I = 0) MJ15015G, MJ15016G 120 C B Collector Cutoff Current I mAdc CEO (V = 30 Vdc, V = 0 Vdc) 2N3055AG 0.7 CE BE(off) (V = 60 Vdc, V = 0 Vdc) MJ15015G, MJ15016G 0.1 CE BE(off) Collector Cutoff Current (Note 3) 2N3055AG I 5.0 mAdc CEV (V = Rated Value, V = 1.5 Vdc) MJ15015G, MJ15016G 1.0 CEV BE(off) Collector Cutoff Current I mAdc CEV (V = Rated Value, V = 1.5 Vdc, 2N3055AG 30 CEV BE(off) T = 150 C) MJ15015G, MJ15016G 6.0 C Emitter Cutoff Current 2N3055AG I 5.0 mAdc EBO (V = 7.0 Vdc, I = 0) MJ15015G, MJ15016G 0.2 EB C SECOND BREAKDOWN (Note 3) Second Breakdown Collector Current with Base Forward Biased I Adc S/b (t = 0.5 s nonrepetitive) 2N3055AG 1.95 (V = 60 Vdc) MJ15015G, MJ15016G 3.0 CE ON CHARACTERISTICS (Note 2 and 3) DC Current Gain h FE (I = 4.0 Adc, V = 2.0 Vdc) 10 70 C CE (I = 4.0 Adc, V = 4.0 Vdc) 20 70 C CE (I = 10 Adc, V = 4.0 Vdc) 5.0 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 4.0 Adc, I = 400 mAdc) 1.1 C B (I = 10 Adc, I = 3.3 Adc) 3.0 C B (I = 15 Adc, I = 7.0 Adc) 5.0 C B BaseEmitter On Voltage V Vdc BE(on) (I = 4.0 Adc, V = 4.0 Vdc) 0.7 1.8 C CE DYNAMIC CHARACTERISTICS (Note 3) CurrentGain Bandwidth Product 2N3055AG, MJ15015G f 0.8 6.0 MHz T (I = 1.0 Adc, V = 4.0 Vdc, f = 1.0 MHz) MJ15016G 2.2 18 C CE Output Capacitance C pF ob (V = 10 Vdc, I = 0, f = 1.0 MHz) 60 600 CB E SWITCHING CHARACTERISTICS (2N3055AG only) (Note 3) RESISTIVE LOAD Delay Time t 0.5 s d (V = 30 Vdc, I = 4.0 Adc, Rise Time t 4.0 s CC C r I = I = 0.4 Adc, B1 B2 Storage Time t 3.0 s t = 25 s Duty Cycle 2% s p Fall Time t 6.0 s f 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2%. 3. Indicates JEDEC Registered Data. (2N3055A)