2N3390 / 2N3391 / 2N3391A / 2N3392 / 2N3393 Discrete POWER & Signal Technologies 2N3390 2N3391 2N3391A 2N3392 2N3393 B TO-92 C E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 25 V CEO V Collector-Base Voltage 25 V CBO V Emitter-Base Voltage 5.0 V EBO I Collector Current - Continuous 500 mA C Operating and Storage Junction Temperature Range -55 to +150 C T , T J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units 2N3390 / 3391/A / 3392 / 3393 PD Total Device Dissipation 625 mW Derate above 25C 5.0 mW/C Thermal Resistance, Junction to Case 83.3 R C/W JC Thermal Resistance, Junction to Ambient 200 R C/W JA 1997 Fairchild Semiconductor Corporation 3390-93, Rev B2N3390 / 2N3391 / 2N3391A / 2N3392 / 2N3393 NPN General Purpose Amplifier (continued) Electrical Characteristics TA = 25C unless otherwise noted Symbol Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown IC = 10 mA, IB = 0 25 V Voltage* V Collector-Base Breakdown Voltage I = 10 A, I = 0 25 V (BR)CBO C E V(BR)EBO Emitter-Base Breakdown Voltage I = 10 A, I = 0 5.0 V E C I Collector-Cutoff Current V = 18 V, I = 0 100 nA CBO CB E I Emitter-Cutoff Current V = 5.0 V, I = 0 100 nA EBO EB C ON CHARACTERISTICS* h DC Current Gain V = 4.5 V, I = 2.0 mA FE CE C 2N3390 400 800 250 500 2N3391/A 150 300 2N3392 90 180 2N3393 SMALL SIGNAL CHARACTERISTICS Output Capacitance V = 10 V, f = 1.0 MHz 2.0 10 pF C CB ob Small-Signal Current Gain I = 2.0 mA, V = 4.5 V, h C CE fe 400 1250 f = 1.0 kHz 2N3390 2N3391/A 250 800 150 500 2N3392 90 400 2N3393 NF Noise Figure V = 4.5 V, I = 100 A, CE C 5.0 dB R = 500 , 2N3391A only G B = 15.7 kHz W *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%