2N3442 HighPower Industrial Transistors NPN silicon power transistor designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches. 2N3442 ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage V 140 Vdc CEO(sus) (I = 200 mAdc, I = 0) C B Collector Cutoff Current I 200 mAdc CEO (V = 140 Vdc, I = 0) CE B Collector Cutoff Current I mAdc CEX (V = 140 Vdc, V = 1.5 Vdc) 5.0 CE BE(off) (V = 140 Vdc, V = 1.5 Vdc, T = 150 C) 30 CE BE(off) C Emitter Cutoff Current I 5.0 mAdc EBO (V = 7.0 Vdc, I = 0) BE C ON CHARACTERISTICS (Note 3) DC Current Gain h FE (I = 3.0 Adc, V = 4.0 Vdc) 20 70 C CE (I = 10 Adc, V = 4.0 Vdc) 7.5 C CE CollectorEmitter Saturation Voltage V 5.0 Vdc CE(sat) (I = 10 Adc, I = 2.0 Adc) C B BaseEmitter On Voltage V 5.7 Vdc BE(on) (I = 10 Adc, V = 4.0 Vdc) C CE DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product (Note 4) f 80 kHz T (I = 2.0 Adc, V = 4.0 Vdc, f = 40 kHz) C CE test SmallSignal Current Gain h 12 72 fe (I = 2.0 Adc, V = 4.0 Vdc, f = 1.0 kHz) C CE 3. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. 4. f = h f T fe test 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 175 200 T , CASE TEMPERATURE (C) C Figure 1. Power Derating