X-On Electronics has gained recognition as a prominent supplier of 2N3771G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N3771G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2N3771G ON Semiconductor

2N3771G electronic component of ON Semiconductor
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See Product Specifications
Part No.2N3771G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 40 V 30 A 200kHz 150 W Through Hole TO-204 (TO-3)
Datasheet: 2N3771G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Availability Price Quantity
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MOQ : 300
Multiples : 100
300 : USD 5.3246
500 : USD 4.6807
1000 : USD 4.28
2500 : USD 4.171
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MOQ : 1
Multiples : 1
1 : USD 15.904
10 : USD 13.8524
25 : USD 13.2073
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MOQ : 1
Multiples : 1
1 : USD 10.6057
10 : USD 9.1318
100 : USD 7.6309
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MOQ : 100
Multiples : 100
100 : USD 3.8251
200 : USD 3.8251
300 : USD 3.8251
400 : USD 3.8251
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MOQ : 200
Multiples : 200
200 : USD 4.2914
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MOQ : 1
Multiples : 1
1 : USD 6.0931
300 : USD 5.5374
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MOQ : 1
Multiples : 1
1 : USD 9.1419
10 : USD 6.0895
50 : USD 5.903
100 : USD 5.1781
600 : USD 4.6292
1200 : USD 4.5153
2700 : USD 4.3703
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MOQ : 1
Multiples : 1
1 : USD 7.1928
3 : USD 5.2416
8 : USD 4.9491
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MOQ : 100
Multiples : 100
100 : USD 3.9365
200 : USD 3.7412
500 : USD 3.6664
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MOQ : 100
Multiples : 100
100 : USD 3.5127
200 : USD 3.3383
500 : USD 3.2716
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MOQ : 200
Multiples : 200
200 : USD 4.7602
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Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Height
Length
Width
Brand
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
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Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2N3771G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N3771G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2N3771, 2N3772 High Power NPN Silicon Power Transistors These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications. Features www.onsemi.com Forward Biased Second Breakdown Current Capability 20 and 30 AMPERE I = 3.75 Adc V = 40 Vdc 2N3771 S/b CE = 2.5 Adc V = 60 Vdc 2N3772 POWER TRANSISTORS CE These Devices are PbFree and are RoHS Compliant NPN SILICON 40 and 60 VOLTS, 150 WATTS MAXIMUM RATINGS (Note 1) Rating Symbol 2N3771 2N3772 Unit MARKING CollectorEmitter Voltage V 40 60 Vdc CEO DIAGRAM CollectorEmitter Voltage V 50 80 Vdc CEX CollectorBase Voltage V 50 100 Vdc CB EmitterBase Voltage V 5.0 7.0 Vdc EB Collector Current Continuous I 30 20 Adc C 2N377xG Peak 30 30 AYYWW MEX TO204AA (TO3) Base Current Continuous I 7.5 5.0 Adc B CASE 107 Peak 15 15 STYLE 1 Total Device Dissipation T = 25C P 150 W C D Derate above 25C 0.855 W/C Operating and Storage Junction T , T 65 to +200 C 2N377x = Device Code J stg Temperature Range x = 1 or 2 G=PbFree Package THERMAL CHARACTERISTICS A = Assembly Location YY = Year Characteristic Symbol Max Unit WW = Work Week Thermal Resistance, 1.17 C/W JC MEX = Country of Origin JunctiontoCase Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION assumed, damage may occur and reliability may be affected. Shipping Device Package 1. Indicates JEDEC registered data. 2N3771G TO204 100 Units / Tray (PbFree) 2N3772G TO204 100 Units / Tray (PbFree) Semiconductor Components Industries, LLC, 2006 1 Publication Order Number: August, 2019 Rev. 12 2N3771/D2N3771, 2N3772 ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 2 and 3) 2N3771 V 40 Vdc CEO(sus) (I = 0.2 Adc, I = 0) 2N3772 60 C B CollectorEmitter Sustaining Voltage 2N3771 V 50 Vdc CEX(sus) (I = 0.2 Adc, V = 1.5 Vdc, R = 100 ) 2N3772 80 C EB(off) BE CollectorEmitter Sustaining Voltage 2N3771 V 45 Vdc CER(sus) (I = 0.2 Adc, R = 100 ) 2N3772 70 C BE Collector Cutoff Current (Note 2) I mAdc CEO (V = 30 Vdc, I = 0) 2N3771 CE B 10 (V = 50 Vdc, I = 0) 2N3772 CE B 10 (V = 25 Vdc, I = 0) CE B Collector Cutoff Current (Note 2) I mAdc CEV (V = 50 Vdc, V = 1.5 Vdc) 2N3771 CE EB(off) 2.0 (V = 100 Vdc, V = 1.5 Vdc) 2N3772 CE EB(off) 5.0 (V = 45 Vdc, V = 1.5 Vdc) 2N6257 CE EB(off) 4.0 (V = 30 Vdc, V = 1.5 Vdc, T = 150 C) 2N3771 CE EB(off) C 10 2N3772 10 (V = 45 Vdc, V = 1.5 Vdc, T = 150 C) CE EB(off) C Collector Cutoff Current (Note 2) I mAdc CBO (V = 50 Vdc, I = 0) 2N3771 CB E 2.0 (V = 100 Vdc, I = 0) 2N3772 CB E 5.0 Emitter Cutoff Current (Note 2) I mAdc EBO (V = 5.0 Vdc, I = 0) 2N3771 BE C 5.0 (V = 7.0 Vdc, I = 0) 2N3772 BE C 5.0 ON CHARACTERISTICS (Note 2) DC Current Gain (Note 3) h FE (I = 15 Adc, V = 4.0 Vdc) 2N3771 C CE 15 60 (I = 10 Adc, V = 4.0 Vdc) 2N3772 C CE 15 60 (I = 8.0 Adc, V = 4.0 Vdc) C CE (I = 30 Adc, V = 4.0 Vdc) 2N3771 C CE 5.0 (I = 20 Adc, V = 4.0 Vdc) 2N3772 C CE 5.0 CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 15 Adc, I = 1.5 Adc) 2N3771 C B 2.0 (I = 10 Adc, I = 1.0 Adc) 2N3772 C B 1.4 (I = 30 Adc, I = 6.0 Adc) 2N3771 C B 4.0 (I = 20 Adc, I = 4.0 Adc) 2N3772 C B 4.0 BaseEmitter On Voltage V Vdc BE(on) (I = 15 Adc, V = 4.0 Vdc) 2N3771 C CE 2.7 (I = 10 Adc, V = 4.0 Vdc) 2N3772 C CE 2.2 (I = 8.0 Adc, V = 4.0 Vdc) C CE *DYNAMIC CHARACTERISTICS (Note 2) CurrentGain Bandwidth Product f 0.2 MHz T (I = 1.0 Adc, V = 4.0 Vdc, f = 50 kHz) C CE test SmallSignal Current Gain h 40 fe (I = 1.0 Adc, V = 4.0 Vdc, f = 1.0 kHz) C CE SECOND BREAKDOWN Second Breakdown Energy with Base Forward Biased, t = 1.0 s (non repetitive) I Adc S/b (V = 40 Vdc) 2N3771 CE 3.75 (V = 60 Vdc) 2N3772 CE 2.5 2. Indicates JEDEC registered data. 3. Pulse Test: 300 s, Rep. Rate 60 cps. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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