NPN General - Purpose Amplifier 2N3904 Description This device is designed as a generalpurpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to www.onsemi.com 100 MHz as an amplifier. MAXIMUM RATINGS (Values are at T = 25C unless otherwise noted.) (Note 1, Note 2) A Symbol Parameter Value Unit V Collector Emitter Voltage 40 V CEO V Collector Base Voltage 60 V CBO 1 V Emitter Base Voltage 6.0 V 1 EBO 2 2 3 3 I Collector Current Continuous 200 mA C TO92 3 TO92 3 T , T Operating and Storage Junction 55 to +150 C J STG CASE 135AN LEADFORMED Temperature Range CASE 135AR Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. MARKING DIAGRAM 1. These ratings are based on a maximum junction temperature of 150C. 2. These are steady state limits. ON Semiconductor should be consulted on applications involving pulsed orlow duty cycle operations. A/2N 3904 THERMAL CHARACTERISTICS YWW (Values are at T = 25C unless otherwise noted.) A 1: Emitter Symbol Parameter Max Unit 2: Base P Total Device Dissipation 625 mW 3: Collector D 12 3 Derate Above 25C 5.0 mW/C Thermal Resistance, 83.3 C/W R JC A = Assembly Code Junction to Case 2N3904 = Device Code YWW = Date Code Thermal Resistance, 200 C/W R JA Junction to Ambient ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Semiconductor Components Industries, LLC, 2002 1 Publication Order Number: July, 2021 Rev. 2 2N3904/D2N3904 ELECTRICAL CHARACTERISTICS (Values are at T = 25C unless otherwise noted.) A Symbol Parametr Conditions Min Max Unit OFF CHARACTERISTICS V Collector Emitter Breakdown Voltage I = 1.0 mA, I = 0 40 V (BR)CEO C B V Collector Base Breakdown Voltage 60 V I = 10 A, I = 0 (BR)CBO C E V Emitter Base Breakdown Voltage I = 10 A, I = 0 6.0 V (BR)EBO E C I Base Cutoff Current V = 30 V, V = 3 V 50 nA BL CE EB I Collector CutOff Current V = 30 V, V = 3 V 50 nA CEX CE EB ON CHARACTERISTICS (Note 3) h DC Current Gain I = 0.1 mA, V = 1.0 V 40 FE C CE I = 1.0 mA, V = 1.0 V 70 C CE I = 10 mA, V = 1.0 V 100 300 C CE I = 50 mA, V = 1.0 V 60 C CE I = 100 mA, V = 1.0 V 30 C CE V Collector Emitter Saturation Voltage I = 10 mA, I = 1.0 mA 0.2 V CE(sat) C B I = 50.0 mA, I = 5.0 mA 0.3 C B V Base Emitter Saturation Voltage I = 10.0 mA, I = 1.0 mA 0.65 0.85 V BE(sat) C B I = 50.0 mA, I = 5.0 mA 0.95 C B SMALLSIGNAL CHARACTERISTICS f Current Gain Bandwidth Product I = 10 mA, V = 20 V, 300 MHz T C CE f = 100 MHz C Output Capacitance V = 5.0 V, I = 0, 4.0 pF obo CB E f = 100 kHz C Input Capacitance V = 0.5 V, I = 0, 8.0 pF ibo EB C f = 100 kHz NF Noise Figure I = 100 A, V = 5.0 V, 5.0 dB C CE R = 1.0 k , S f = 10 Hz to 15.7 kHz SWITCHING CHARACTERISTICS t Delay Time V = 3.0 V, V = 0.5 V, 35 ns d CC BE I = 10 mA, I = 1.0 mA C B1 t Rise Time 35 ns r t Storage Time V = 3.0 V, I = 10 mA, 200 ns s CC C I = I = 1.0 mA B1 B2 t Fall Time 50 ns f Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width 300 s Duty Cycle 2%. www.onsemi.com 2