X-On Electronics has gained recognition as a prominent supplier of 2N3906G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N3906G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2N3906G ON Semiconductor

2N3906G electronic component of ON Semiconductor
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Part No.2N3906G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: 2N3906G
PNP transistor for general purpose with low noise and medium current.
Datasheet:
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.0267 ea
Line Total: USD 0.03 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 1
Multiples : 1
1 : USD 0.0267
10 : USD 0.0248
2500 : USD 0.0212
15000 : USD 0.0205
25000 : USD 0.0202

   
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We are delighted to provide the 2N3906G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N3906G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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The 2N3906G is an NPN Bipolar Junction Transistor (BJT) from ON Semiconductor. It is designed to be used in low-power, general-purpose switching and amplifier applications. It has a maximum DC collector current of 200 mA, a maximum DC collector-base voltage of 40 V, a maximum DC emitter-base voltage of 5 V, and an amplification factor of 400-600. The 2N3906G is available in three different packages: Micro-8 (TO-92) , SOT-23, and SOT-223. The maximum power dissipation is 625 mW with minimal thermal resistance. The transistor is capable of operating in both pre-biased and e-bias applications. It also has a minimum hFE of 40.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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