2N4124 / MMBT4124
2N4124 MMBT4124
C
E
TO-92
C
B B
SOT-23
E
Mark: ZC
NPN General Purpose Amplifier
This device is designed as a general purpose amplifier and switch.
The useful dynamic range extends to 100 mA as a switch and to
100 MHz as an amplifier.
Absolute Maximum Ratings* TA = 25C unless otherwise noted
Symbol Parameter Value Units
V Collector-Emitter Voltage 25 V
CEO
V Collector-Base Voltage 30 V
CBO
V Emitter-Base Voltage 5.0 V
EBO
I Collector Current - Continuous 200 mA
C
Operating and Storage Junction Temperature Range -55 to +150 C
T , T
J stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25C unless otherwise noted
Symbol Characteristic Max Units
2N4124 *MMBT4124
P Total Device Dissipation 625 350 mW
D
Derate above 25 C 5.0 2.8 mW/ C
Thermal Resistance, Junction to Case 83.3
R C/W
JC
R Thermal Resistance, Junction to Ambient 200 357 C/W
JA
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06
2001 Fairchild Semiconductor Corporation 2N4124/MMBT4124, Rev A2N4124 / MMBT4124
NPN General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V Collector-Emitter Breakdown Voltage I = 1.0 mA, I = 0 25 V
(BR)CEO C B
V Collector-Base Breakdown Voltage I = 10 A, I = 0 30 V
(BR)CBO
C E
V Emitter-Base Breakdown Voltage I = 10 A, I = 0 5.0 V
(BR)EBO C C
I Collector Cutoff Current V = 20 V, I = 0 50 nA
CBO CB E
I Emitter Cutoff Current V = 3.0 V, I = 0 50 nA
EBO EB C
ON CHARACTERISTICS*
h DC Current Gain I = 2.0 mA, V = 1.0 V 120 360
FE C CE
I = 50 mA, V = 1.0 V 60
C CE
Collector-Emitter Saturation Voltage I = 50 mA, I = 5.0 mA 0.3 V
V C B
CE(sat)
V Base-Emitter Saturation Voltage I = 50 mA, I = 5.0 mA 0.95 V
C B
BE(sat)
SMALL SIGNAL CHARACTERISTICS
f Current Gain - Bandwidth Product I = 10 mA, V = 20 V, 300 MHz
T C CE
f = 100 MHz
C Output Capacitance V = 5.0 V, I = 0, 4.0 pF
CB E
obo
f = 100 kHz
Input Capacitance V = 0.5 V, I = 0, 8.0 pF
C BE C
ibo
f = 1.0 kHz
C Collector-Base Capcitance V = 5.0 V, I = 0, 4.0 pF
CB E
cb
f = 100 kHz
Small-Signal Current Gain V = 10 V, I = 2.0 mA, 120 480
h CE C
fe
f = 1.0 kHz
NF Noise Figure I = 100 A, V = 5.0 V, 5.0 dB
C CE
R =1.0k , f=10 Hz to 15.7 kHz
S
*Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%