MMBT4126 PNP General-Purpose Amplifier
March 2014
MMBT4126
PNP General-Purpose Amplifier
Description
C
This device is designed for general-purpose amplifier
and switching applications at collector currents to 10 A
as a switch and to 100 mA as an amplifier.
E
SOT-23
B
Mark: ZF
Ordering Information
Part Number Marking Package Packing Method
MMBT4126 ZF SOT-23 3L Tape and Reel
(1),(2)
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted.
A
Symbol Parameter Value Unit
V Collector-Emitter Voltage -25 V
CEO
V Collector-Base Voltage -25 V
CBO
V Emitter-Base Voltage -4 V
EBO
I Collector Current - Continuous -200 mA
C
T T Junction and Storage Temperature Range -55 to +150 C
J , STG
Notes:
1. These ratings are based on a maximum junction temperature of 150C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT4126 Rev. 1.1.0 1 MMBT4126 PNP General-Purpose Amplifier
(3)
Thermal Characteristics
Values are at T = 25C unless otherwise noted.
A
Symbol Parameter Max. Unit
Total Device Dissipation 350 mW
P
D
Derate Above T = 25C 2.8 mW/C
A
R Thermal Resistance, Junction to Ambient 357 C/W
JA
Note:
3. Device mounted on FR-4 PCB 1.6 inch X 1.6 inch X 0.06 inch.
Electrical Characteristics
Values are at T = 25C unless otherwise noted.
A
Symbol Parameter Conditions Min. Max. Unit
V Collector-Emitter Breakdown Voltage I = -1.0 mA, I = 0 -25 V
(BR)CEO C B
V Collector-Base Breakdown Voltage I = -10 A, I = 0 -25 V
(BR)CBO C E
V Emitter-Base Breakdown Voltage I = -10 A, I = 0 -4.0 V
(BR)EBO E C
I Collector Cut-Off Current V = -20 V, I = 0 -50 nA
CBO CB E
I Emitter Cut-Off Current V = -3.0 V, I = 0 -50 nA
EBO EB C
I = -2.0 mA, V = -1.0 V 120 360
C CE
(4)
h DC Current Gain
FE
I = -50 mA, V = -1.0 V 60
C CE
Collector-Emitter Saturation
V (sat) I = -50 mA, I = -5.0 mA -0.4 V
CE (4) C B
Voltage
(4)
V (sat) Base-Emitter Saturation Voltage I = -50 mA, I = -5.0 mA -0.95 V
BE C B
I = -10 mA, V = -20 V,
C CE
f Current Gain - Bandwidth Product 250 MHz
T
f = 100 MHz
= -0.5 V, I = 0,
V
EB C
C Input Capacitance 10 pF
ib
f = 1.0 MHz
V = -5.0 V, I = 0,
CB E
C Collector-Base Capcitance 4.5 pF
cb
f = 100 kHz
I = -2.0 mA, V = -10 V,
C CE
h Small-Signal Current Gain 120 480
fe
f = 1.0 kHz
= -100 A, V = -5.0 V,
I
C CE
NF Noise Figure R = -1.0 k, 4.0 dB
S
f = 10 Hz to 15.7 kHz
Note:
4. Pulse test: pulse width 300 s, duty cycle 2.0%.
1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT4126 Rev. 1.1.0 2