2N5401
Amplifier Transistors
PNP Silicon
Features
These are PbFree Devices*
2N5401
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (Note 1) V Vdc
(BR)CEO
(I = 1.0 mAdc, I = 0) 150
C B
Collector Base Breakdown Voltage V 160 Vdc
(BR)CBO
(I = 100 Adc, I = 0)
C E
Emitter Base Breakdown Voltage V Vdc
(BR)EBO
(I = 10 Adc, I = 0) 5.0
E C
Collector Cutoff Current I
CBO
(V = 120 Vdc, I = 0) 50 nAdc
CB E
(V = 120 Vdc, I = 0, T = 100C) 50 Adc
CB E A
Emitter Cutoff Current I nAdc
EBO
(V = 3.0 Vdc, I = 0) 50
EB C
ON CHARACTERISTICS (Note 1)
DC Current Gain h
FE
(I = 1.0 mAdc, V = 5.0 Vdc) 50
C CE
(I = 10 mAdc, V = 5.0 Vdc) 60 240
C CE
(I = 50 mAdc, V = 5.0 Vdc) 50
C CE
Collector Emitter Saturation Voltage V Vdc
CE(sat)
(I = 10 mAdc, I = 1.0 mAdc) 0.2
C B
(I = 50 mAdc, I = 5.0 mAdc) 0.5
C B
Base Emitter Saturation Voltage V Vdc
BE(sat)
(I = 10 mAdc, I = 1.0 mAdc) 1.0
C B
(I = 50 mAdc, I = 5.0 mAdc) 1.0
C B
SMALLSIGNAL CHARACTERISTICS
Current Gain Bandwidth Product f MHz
T
(I = 10 mAdc, V = 10 Vdc, f = 100 MHz) 100 300
C CE
Output Capacitance C pF
obo
(V = 10 Vdc, I = 0, f = 1.0 MHz) 6.0
CB E
SmallSignal Current Gain h
fe
(I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) 40 200
C CE
Noise Figure NF dB
(I = 250 Adc, V = 5.0 Vdc, R = 1.0 k, f = 1.0 kHz) 8.0
C CE S
1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
ORDERING INFORMATION
Device Package Shipping
2N5401G TO92 5000 Unit / Bulk
(Pb Free)
2N5401RLRAG TO92 2000 / Tape & Reel
(Pb Free)
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.