X-On Electronics has gained recognition as a prominent supplier of 2N5401YTA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N5401YTA Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2N5401YTA ON Semiconductor

2N5401YTA electronic component of ON Semiconductor
Images are for reference only
See Product Specifications
Part No.2N5401YTA
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT PNP Transistor General Purpose
Datasheet: 2N5401YTA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2000: USD 0.0468 ea
Line Total: USD 93.6 
Availability - 15520
Ship by Fri. 11 Oct to Thu. 17 Oct
MOQ: 2000  Multiples: 2000
Pack Size: 2000
Availability Price Quantity
15520
Ship by Fri. 11 Oct to Thu. 17 Oct
MOQ : 2000
Multiples : 2000
2000 : USD 0.0468
6000 : USD 0.0449
10000 : USD 0.0442
26000 : USD 0.0431
50000 : USD 0.0415
100000 : USD 0.0405
150000 : USD 0.0399
250000 : USD 0.0393

5820
Ship by Fri. 11 Oct to Thu. 17 Oct
MOQ : 2000
Multiples : 2000
2000 : USD 0.0768
4000 : USD 0.0685
6000 : USD 0.0647
10000 : USD 0.0606
14000 : USD 0.058
20000 : USD 0.0555
50000 : USD 0.0502
100000 : USD 0.0464
200000 : USD 0.0431

1241
Ship by Fri. 11 Oct to Thu. 17 Oct
MOQ : 20
Multiples : 20
20 : USD 0.1078
100 : USD 0.0966
260 : USD 0.0742
680 : USD 0.07
10000 : USD 0.0672

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Height
Length
Width
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
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We are delighted to provide the 2N5401YTA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N5401YTA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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The 2N5401YTA is an NPN general-purpose BJT transistor made by ON Semiconductor. It can be used in a variety of applications including amplifiers, switches, and currents up to 500mA. Its Vceo (collector-emitter voltage) max is 60V, and its hFE (beta) range is 40-300. It has a continuous power dissipation of 625mW, and its reverse leakage current is under 1µA. This part is is housed in a surface-mount SOT-223 package, and it can operate at temperatures ranging from -65°C to +150°C.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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