2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features These are PbFree Devices* 2N5550, 2N5551 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note 1) V (BR)CEO (I = 1.0 mAdc, I = 0) 2N5550 140 Vdc C B 2N5551 160 CollectorBase Breakdown Voltage V (BR)CBO (I = 100 Adc, I = 0 ) 2N5550 160 Vdc C E 2N5551 180 EmitterBase Breakdown Voltage V (BR)EBO (I = 10 Adc, I = 0) 6.0 Vdc E C Collector Cutoff Current I CBO (V = 100 Vdc, I = 0) 2N5550 100 nAdc CB E (V = 120 Vdc, I = 0) 2N5551 50 CB E (V = 100 Vdc, I = 0, T = 100C) 2N5550 100 Adc CB E A (V = 120 Vdc, I = 0, T = 100C) 2N5551 50 CB E A Emitter Cutoff Current I 50 nAdc EBO (V = 4.0 Vdc, I = 0) EB C ON CHARACTERISTICS (Note 1) DC Current Gain h FE (I = 1.0 mAdc, V = 5.0 Vdc) 2N5550 60 C CE 2N5551 80 (I = 10 mAdc, V = 5.0 Vdc) 2N5550 60 250 C CE 2N5551 80 250 (I = 50 mAdc, V = 5.0 Vdc) 2N5550 20 C CE 2N5551 30 CollectorEmitter Saturation Voltage V CE(sat) (I = 10 mAdc, I = 1.0 mAdc) Both Types 0.15 Vdc C B (I = 50 mAdc, I = 5.0 mAdc) 2N5550 0.25 C B 2N5551 0.20 BaseEmitter Saturation Voltage V BE(sat) (I = 10 mAdc, I = 1.0 mAdc) Both Types 1.0 Vdc C B (I = 50 mAdc, I = 5.0 mAdc) 2N5550 1.2 C B 2N5551 1.0 SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f 100 300 MHz T (I = 10 mAdc, V = 10 Vdc, f = 100 MHz) C CE Output Capacitance C 6.0 pF obo (V = 10 Vdc, I = 0, f = 1.0 MHz) CB E Input Capacitance C pF ibo (V = 0.5 Vdc, I = 0, f = 1.0 MHz) 2N5550 30 EB C 2N5551 20 SmallSignal Current Gain h 50 200 fe (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) C CE Noise Figure NF dB (I = 250 Adc, V = 5.0 Vdc, R = 1.0 k , f = 1.0 kHz) 2N5550 10 C CE S 2N5551 8.0 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.