X-On Electronics has gained recognition as a prominent supplier of 2N5657G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N5657G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2N5657G ON Semiconductor

2N5657G electronic component of ON Semiconductor
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See Product Specifications
Part No.2N5657G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 350 V 500 mA 10MHz 20 W Through Hole TO-126
Datasheet: 2N5657G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2889 ea
Line Total: USD 0.29 
Availability - 20
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
20
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 0.2889

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
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Cnhts
Hts Code
Mxhts
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Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2N5657G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N5657G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2N5655G, 2N5657G Plastic NPN Silicon High-Voltage Power Transistors These devices are designed for use in lineoperated equipment such as audio output amplifiers lowcurrent, highvoltage converters and 2N5655G, 2N5657G ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) (Note 2) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage V Vdc CEO(sus) (I = 100 mAdc (inductive), L = 50 mH) C 2N5655G 250 2N5657G 350 CollectorEmitter Breakdown Voltage V Vdc (BR)CEO (I = 1.0 mAdc, I = 0) C B 2N5655G 250 2N5657G 350 Collector Cutoff Current I mAdc CEO (V = 150 Vdc, I = 0) CE B 2N5655G 0.1 (V = 250 Vdc, I = 0) CE B 2N5657G 0.1 Collector Cutoff Current I mAdc CEX (V = 250 Vdc, V = 1.5 Vdc) CE EB(off) 2N5655G 0.1 (V = 350 Vdc, V = 1.5 Vdc) CE EB(off) 2N5657G 0.1 (V = 150 Vdc, V = 1.5 Vdc, T = 100 C) CE EB(off) C 2N5655G 1.0 (V = 250 Vdc, V = 1.5 Vdc, T = 100 C) CE EB(off) C 2N5657G 1.0 Collector Cutoff Current I Adc CBO (V = 275 Vdc, I = 0) CB E 2N5655G 10 (V = 375 Vdc, I = 0) CB E 2N5657G 10 Emitter Cutoff Current I Adc EBO (V = 6.0 Vdc, I = 0) 10 EB C ON CHARACTERISTICS DC Current Gain (Note 3) h FE (I = 50 mAdc, V = 10 Vdc) 25 C CE (I = 100 mAdc, V = 10 Vdc) 30 250 C CE (I = 250 mAdc, V = 10 Vdc) 15 C CE (I = 500 mAdc, V = 10 Vdc) 5.0 C CE CollectorEmitter Saturation Voltage (Note 3) V Vdc CE(sat) (I = 100 mAdc, I = 10 mAdc) 1.0 C B (I = 250 mAdc, I = 25 mAdc) 2.5 C B (I = 500 mAdc, I = 100 mAdc) 10 C B BaseEmitter Voltage V Vdc BE (I = 100 mAdc, V = 10 Vdc) (Note 3) 1.0 C CE DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 50 mAdc, V = 10 Vdc, f = 10 MHz) (Note 4) 10 C CE Output Capacitance C pF ob (V = 10 Vdc, I = 0, f = 100 kHz) 25 CB E SmallSignal Current Gain h fe (I = 100 mAdc, V = 10 Vdc, f = 1.0 kHz) 20 C CE Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Indicates JEDEC registered data for 2N5655 Series. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 4. f is defined as the frequency at which h extrapolates to unity. T fe

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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