2N5684G ON Semiconductor

2N5684G electronic component of ON Semiconductor
2N5684G ON Semiconductor
2N5684G Bipolar Transistors - BJT
2N5684G  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 2N5684G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N5684G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. 2N5684G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT 50A 80V 300W PNP
Datasheet: 2N5684G Datasheet (PDF)
Price (USD)
100: USD 8.0537 ea
Line Total: USD 805.37 
Availability : 388
  
Ship by Tue. 04 Nov to Mon. 10 Nov
QtyUnit Price
100$ 8.0537

Availability 97
Ship by Tue. 04 Nov to Mon. 10 Nov
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 15.0625
25$ 12.5875
50$ 12.525
100$ 10.9375
300$ 10.875
500$ 10.825
1000$ 10.7625


Availability 291
Ship by Tue. 04 Nov to Mon. 10 Nov
MOQ : 100
Multiples : 100
QtyUnit Price
100$ 10.6612


Availability 388
Ship by Tue. 04 Nov to Mon. 10 Nov
MOQ : 100
Multiples : 100
QtyUnit Price
100$ 8.0537


Availability 87
Ship by Tue. 04 Nov to Mon. 10 Nov
MOQ : 33
Multiples : 1
QtyUnit Price
33$ 14.6406
100$ 13.9062
500$ 13.1719
1000$ 12.4375
10000$ 11.7188


Availability 97
Ship by Tue. 04 Nov to Mon. 10 Nov
MOQ : 15
Multiples : 5
QtyUnit Price
15$ 17.5577
25$ 15.1412
50$ 14.397
100$ 12.9852

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Category
Brand Category
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2N5684G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N5684G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2N5684 (PNP), 2N5686 (NPN) High-Current Complementary Silicon Power Transistors These packages are designed for use in high-power amplifier and switching circuit applications. 2N5684 (PNP), 2N5686 (NPN) ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) (Note 2) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (Note 3) (I = 0.2 Adc, I = 0) V 80 - Vdc C B CEO(sus) Collector Cutoff Current (V = 40 Vdc, I = 0) I - 1.0 mAdc CE B CEO Collector Cutoff Current I mAdc CEX (V = 80 Vdc, V = 1.5 Vdc) - 2.0 CE EB(off) (V = 80 Vdc, V = 1.5 Vdc, T = 150 C) - 10 CE EB(off) C Collector Cutoff Current (V = 80 Vdc, I = 0) I - 2.0 mAdc CB E CBO Emitter Cutoff Current (V = 5.0 Vdc, I = 0) I - 5.0 mAdc BE C EBO ON CHARACTERISTICS DC Current Gain (Note 3) h - FE (I = 25 Adc, V = 2.0 Vdc) C CE 15 60 (I = 50 Adc, V = 5.0 Vdc) C CE 5.0 - Collector-Emitter Saturation Voltage (Note 3) V Vdc CE(sat) (I = 25 Adc, I = 2.5 Adc) C B - 1.0 (I = 50 Adc, I = 10 Adc) C B - 5.0 Base-Emitter Saturation Voltage (Note 2) (I = 25 Adc, I = 2.5 Adc) V - 2.0 Vdc C B BE(sat) Base-Emitter On Voltage (Note 2) (I = 25 Adc, V = 2.0 Vdc) V - 2.0 Vdc C CE BE(on) DYNAMIC CHARACTERISTICS Current-Gain - Bandwidth Product (I = 5.0 Adc, V = 10 Vdc, f = 1.0 MHz) f 2.0 - MHz C CE T Output Capacitance 2N5684 C - 2000 pF ob (V = 10 Vdc, I = 0, f = 0.1 MHz) 2N5686 - 1200 CB E Small-Signal Current Gain (I = 10 Adc, V = 5.0 Vdc, f = 1.0 kHz) h 15 - C CE fe 2. Indicates JEDEC Registered Data. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. V - 30 V CC R L + 2.0 V TO SCOPE 0 1.0 t 20 ns r R B 0.7 t r 0.5 -12 V t r 20 ns 0.3 10 to 100 s 0.2 2N5684 (PNP) DUTY CYCLE 2.0% t V - 30 V 2N5686 (NPN) d CC 0.1 R L 0.07 +10 V 0.05 TO SCOPE T = 25C J 0 0.03 t 20 ns r I /I = 10 C B R B 0.02 V = 30 V CC -12 V t 20 ns r 0.01 V + 4.0 V 10 to 100 s BB 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 I , COLLECTOR CURRENT (AMP) DUTY CYCLE 2.0% C FOR CURVES OF FIGURES 3 & 6, R & R ARE VARIED. B L Figure 3. Turn-On Time INPUT LEVELS ARE APPROXIMATELY AS SHOWN. FOR NPN CIRCUITS, REVERSE ALL POLARITIES. Figure 2. Switching Time Test Circuit

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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