X-On Electronics has gained recognition as a prominent supplier of 2N5684G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N5684G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2N5684G ON Semiconductor

2N5684G electronic component of ON Semiconductor
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See Product Specifications
Part No.2N5684G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT 50A 80V 300W PNP
Datasheet: 2N5684G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 12.875 ea
Line Total: USD 64.38 
Availability - 97
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
97
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 5
Multiples : 5
5 : USD 12.875
25 : USD 11.75
50 : USD 11.4625
100 : USD 11.1875
300 : USD 10.8125
500 : USD 10.65
1000 : USD 10.4875

679
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 100
Multiples : 100
100 : USD 11.3438
200 : USD 11.2307
500 : USD 11.1189

72
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 9
Multiples : 1
9 : USD 14.5991

97
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 5
Multiples : 5
5 : USD 17.407
25 : USD 15.886
50 : USD 15.4973
100 : USD 15.1255
300 : USD 14.6185

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Category
Brand Category
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We are delighted to provide the 2N5684G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N5684G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2N5684 (PNP), 2N5686 (NPN) High-Current Complementary Silicon Power Transistors These packages are designed for use in high-power amplifier and switching circuit applications. 2N5684 (PNP), 2N5686 (NPN) ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) (Note 2) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (Note 3) (I = 0.2 Adc, I = 0) V 80 - Vdc C B CEO(sus) Collector Cutoff Current (V = 40 Vdc, I = 0) I - 1.0 mAdc CE B CEO Collector Cutoff Current I mAdc CEX (V = 80 Vdc, V = 1.5 Vdc) - 2.0 CE EB(off) (V = 80 Vdc, V = 1.5 Vdc, T = 150 C) - 10 CE EB(off) C Collector Cutoff Current (V = 80 Vdc, I = 0) I - 2.0 mAdc CB E CBO Emitter Cutoff Current (V = 5.0 Vdc, I = 0) I - 5.0 mAdc BE C EBO ON CHARACTERISTICS DC Current Gain (Note 3) h - FE (I = 25 Adc, V = 2.0 Vdc) C CE 15 60 (I = 50 Adc, V = 5.0 Vdc) C CE 5.0 - Collector-Emitter Saturation Voltage (Note 3) V Vdc CE(sat) (I = 25 Adc, I = 2.5 Adc) C B - 1.0 (I = 50 Adc, I = 10 Adc) C B - 5.0 Base-Emitter Saturation Voltage (Note 2) (I = 25 Adc, I = 2.5 Adc) V - 2.0 Vdc C B BE(sat) Base-Emitter On Voltage (Note 2) (I = 25 Adc, V = 2.0 Vdc) V - 2.0 Vdc C CE BE(on) DYNAMIC CHARACTERISTICS Current-Gain - Bandwidth Product (I = 5.0 Adc, V = 10 Vdc, f = 1.0 MHz) f 2.0 - MHz C CE T Output Capacitance 2N5684 C - 2000 pF ob (V = 10 Vdc, I = 0, f = 0.1 MHz) 2N5686 - 1200 CB E Small-Signal Current Gain (I = 10 Adc, V = 5.0 Vdc, f = 1.0 kHz) h 15 - C CE fe 2. Indicates JEDEC Registered Data. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. V - 30 V CC R L + 2.0 V TO SCOPE 0 1.0 t 20 ns r R B 0.7 t r 0.5 -12 V t r 20 ns 0.3 10 to 100 s 0.2 2N5684 (PNP) DUTY CYCLE 2.0% t V - 30 V 2N5686 (NPN) d CC 0.1 R L 0.07 +10 V 0.05 TO SCOPE T = 25C J 0 0.03 t 20 ns r I /I = 10 C B R B 0.02 V = 30 V CC -12 V t 20 ns r 0.01 V + 4.0 V 10 to 100 s BB 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 I , COLLECTOR CURRENT (AMP) DUTY CYCLE 2.0% C FOR CURVES OF FIGURES 3 & 6, R & R ARE VARIED. B L Figure 3. Turn-On Time INPUT LEVELS ARE APPROXIMATELY AS SHOWN. FOR NPN CIRCUITS, REVERSE ALL POLARITIES. Figure 2. Switching Time Test Circuit

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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