X-On Electronics has gained recognition as a prominent supplier of 2N5686G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N5686G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2N5686G ON Semiconductor

2N5686G electronic component of ON Semiconductor
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Part No.2N5686G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 80 V 50 A 2MHz 300 W Through Hole TO-204 (TO-3)
Datasheet: 2N5686G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 16.852 ea
Line Total: USD 16.85 
Availability - 516
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
516
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 16.852
10 : USD 13.024
20 : USD 12.496
100 : USD 12.001

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
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We are delighted to provide the 2N5686G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N5686G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2N5684 (PNP), 2N5686 (NPN) High-Current Complementary Silicon Power Transistors These packages are designed for use in high-power amplifier and switching circuit applications. 2N5684 (PNP), 2N5686 (NPN) ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) (Note 2) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (Note 3) (I = 0.2 Adc, I = 0) V 80 - Vdc C B CEO(sus) Collector Cutoff Current (V = 40 Vdc, I = 0) I - 1.0 mAdc CE B CEO Collector Cutoff Current I mAdc CEX (V = 80 Vdc, V = 1.5 Vdc) - 2.0 CE EB(off) (V = 80 Vdc, V = 1.5 Vdc, T = 150 C) - 10 CE EB(off) C Collector Cutoff Current (V = 80 Vdc, I = 0) I - 2.0 mAdc CB E CBO Emitter Cutoff Current (V = 5.0 Vdc, I = 0) I - 5.0 mAdc BE C EBO ON CHARACTERISTICS DC Current Gain (Note 3) h - FE (I = 25 Adc, V = 2.0 Vdc) C CE 15 60 (I = 50 Adc, V = 5.0 Vdc) C CE 5.0 - Collector-Emitter Saturation Voltage (Note 3) V Vdc CE(sat) (I = 25 Adc, I = 2.5 Adc) C B - 1.0 (I = 50 Adc, I = 10 Adc) C B - 5.0 Base-Emitter Saturation Voltage (Note 2) (I = 25 Adc, I = 2.5 Adc) V - 2.0 Vdc C B BE(sat) Base-Emitter On Voltage (Note 2) (I = 25 Adc, V = 2.0 Vdc) V - 2.0 Vdc C CE BE(on) DYNAMIC CHARACTERISTICS Current-Gain - Bandwidth Product (I = 5.0 Adc, V = 10 Vdc, f = 1.0 MHz) f 2.0 - MHz C CE T Output Capacitance 2N5684 C - 2000 pF ob (V = 10 Vdc, I = 0, f = 0.1 MHz) 2N5686 - 1200 CB E Small-Signal Current Gain (I = 10 Adc, V = 5.0 Vdc, f = 1.0 kHz) h 15 - C CE fe 2. Indicates JEDEC Registered Data. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. V - 30 V CC R L + 2.0 V TO SCOPE 0 1.0 t 20 ns r R B 0.7 t r 0.5 -12 V t r 20 ns 0.3 10 to 100 s 0.2 2N5684 (PNP) DUTY CYCLE 2.0% t V - 30 V 2N5686 (NPN) d CC 0.1 R L 0.07 +10 V 0.05 TO SCOPE T = 25C J 0 0.03 t 20 ns r I /I = 10 C B R B 0.02 V = 30 V CC -12 V t 20 ns r 0.01 V + 4.0 V 10 to 100 s BB 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 I , COLLECTOR CURRENT (AMP) DUTY CYCLE 2.0% C FOR CURVES OF FIGURES 3 & 6, R & R ARE VARIED. B L Figure 3. Turn-On Time INPUT LEVELS ARE APPROXIMATELY AS SHOWN. FOR NPN CIRCUITS, REVERSE ALL POLARITIES. Figure 2. Switching Time Test Circuit

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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