2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) 2N5884 and 2N5886 are Preferred Devices Complementary Silicon HighPower Transistors Complementary silicon highpower transistors are designed for generalpurpose power amplifier and switching applications. 2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) ELECTRICAL CHARACTERISTICS (Note 2) (T = 25C unless otherwise noted) C Characteristic Symbol Min Max Unit CollectorEmitter Sustaining Voltage (Note 3) 2N5883, 2N5885 V 60 Vdc CEO(sus) (I = 200 mAdc, I = 0) 2N5884, 2N5886 80 C B Collector Cutoff Current I CEO (V = 30 Vdc, I = 0) 2N5883, 2N5885 2.0 mAdc CE B (V = 40 Vdc, I = 0) 2N5984, 2N5886 2.0 CE B Collector Cutoff Current I CEX (V = 60 Vdc, V = 1.5 Vdc) 2N5883, 2N5885 mAdc CE BE(off) 1.0 (V = 80 Vdc, V = 1.5 Vdc) 2N5884, 2N5886 CE BE(off) 1.0 (V = 60 Vdc, V = 1.5 Vdc, T = 150C) 2N5883, 2N5885 CE BE(off) C 10 (V = 80 Vdc, V = 1.5 Vdc, T = 150C) 2N5884, 2N5886 CE BE(off) C 10 Collector Cutoff Current I CBO (V = 60 Vdc, I = 0) 2N5883, 2N5885 mAdc CB E 1.0 (V = 80 Vdc, I = 0) 2N5884, 2N5886 CB E 1.0 Emitter Cutoff Current (V = 5.0 Vdc, I = 0) I 1.0 mAdc EB C EBO ON CHARACTERISTICS DC Current Gain (Note 3) h FE (I = 3.0 Adc, V = 4.0 Vdc) 35 C CE (I = 10 Adc, V = 4.0 Vdc) 20 100 C CE (I = 25 Adc, V = 4.0 Vdc) 4.0 C CE CollectorEmitter Saturation Voltage (Note 3) V CE(sat) (I = 15 Adc, I = 1.5 Adc) 1.0 Vdc C B (I = 25 Adc, I = 6.25 Adc) 4.0 C B BaseEmitter Saturation Voltage (Note 3) (I = 25 Adc, I = 6.25 Adc) V 2.5 Vdc C B BE(sat) BaseEmitter On Voltage (Note 3) (I = 10 Adc, V = 4.0 Vdc) V 1.5 Vdc C CE BE(on) DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product (Note 4) (I = 1.0 Adc, V = 10 Vdc, f = 1.0 MHz) f 4.0 MHz C CE test T Output Capacitance 2N5883, 2N5884 C 1000 pF ob (V = 10 Vdc, I = 0, f = 1.0 MHz) 2N5885, 2N5886 500 CB E SmallSignal Current Gain (I = 3.0 Adc, V = 4.0 Vdc, f = 1.0 kHz) h 20 C CE test fe SWITCHING CHARACTERISTICS Rise Time t 0.7 s r (V = 30 Vdc, I = 10 Adc, I = I = 1.0 Adc) Storage Time t 1.0 s CC C B1 B2 s Fall Time t 0.8 s f 2. Indicates JEDEC Registered Data. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 4. f = h f . T fe test 200 175 150 125 100 75 50 25 0 0 25 50 75 100 125 150 175 200 T , CASE TEMPERATURE (C) C Figure 1. Power Derating