Preferred Device Programmable Unijunction Transistor Triggers Designed to enable the engineer to program unijunction 2N6027, 2N6028 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R 75 C/W JC Thermal Resistance, Junction to Ambient R 200 C/W JA Maximum Lead Temperature for Soldering Purposes T 260 C L ( 1/16 from case, 10 secs max) ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted.) C Characteristic Fig. No. Symbol Min Typ Max Unit *Peak Current 2,9,11 I A P (V = 10 Vdc, R = 1 M) 2N6027 1.25 2.0 S G 2N6028 0.08 0.15 (V = 10 Vdc, R = 10 k ohms) 2N6027 4.0 5.0 S G 2N6028 0.70 1.0 *Offset Voltage 1 V Volts T (V = 10 Vdc, R = 1 M) 2N6027 0.2 0.70 1.6 S G 2N6028 0.2 0.50 0.6 (V = 10 Vdc, R = 10 k ohms) (Both Types) 0.2 0.35 0.6 S G *Valley Current 1,4,5 I A V (V = 10 Vdc, R = 1 M) 2N6027 18 50 S G 2N6028 18 25 (V = 10 Vdc, R = 10 k ohms) 2N6027 70 150 S G 2N6028 25 150 (V = 10 Vdc, R = 200 ohms) 2N6027 1.5 mA S G 2N6028 1.0 *Gate to Anode Leakage Current I nAdc GAO (V = 40 Vdc, T = 25C, Cathode Open) 1.0 10 S A (V = 40 Vdc, T = 75C, Cathode Open) 3.0 S A Gate to Cathode Leakage Current I 5.0 50 nAdc GKS (V = 40 Vdc, Anode to Cathode Shorted) S (1) *Forward Voltage (I = 50 mA Peak) 1,6 V 0.8 1.5 Volts F F *Peak Output Voltage 3,7 V 6.0 11 Volt o (V = 20 Vdc, C = 0.2 F) G C Pulse Voltage Rise Time 3 t 40 80 ns r (V = 20 Vdc, C = 0.2 F) B C *Indicates JEDEC Registered Data (1) Pulse Test: Pulse Width 300 sec, Duty Cycle 2%.