NPN Epitaxial Silicon Transistor 2N6517 Features High Voltage Transistor www.onsemi.com Collector Dissipation: PC(max) = 625 mW Complement to 2N6520 Suffix C means Center Collector (1. Emitter 2. Collector 3. Base) ABSOLUTE MAXIMUM RATINGS (Values are at T = 25C unless otherwise noted.) A Symbol Parameter Value Unit V CollectorBase Voltage V CBO 1 1 2 2 3 2N6517 350 3 400 2N6517C TO92 3 4.825x4.76 TO92 3 4.83x4.76 V CollectorEmitter Voltage V CEO CASE 135AN LEADFORMED 2N6517 350 CASE 135AR 2N6517C 400 V EmitterBase Voltage 6 V EBO MARKING DIAGRAM I Collector Current 500 mA C P Collector Power Dissipation 625 mW C A/2N T Junction Temperature 150 C J 6517 YWW T Storage Temperature 55 ~ 150 C STG Stresses exceeding those listed in the Maximum Ratings table may damage the 1: Emitter device. If any of these limits are exceeded, device functionality should not be 2: Base assumed, damage may occur and reliability may be affected. 3: Collector 12 3 A = Assembly Code 2N6517/2N6517C = Device Code YWW = Date Code ORDERING INFORMATION Device Package Shipping 2N6517BU TO92 3 10000 / (PbFree) Bulk Bag 2N6517TA TO92 3 2000 / (PbFree) FanFold 2N6517CTA TO92 3 2000 / (PbFree) FanFold Semiconductor Components Industries, LLC, 2010 1 Publication Order Number: July, 2021 Rev. 3 2N6517/D2N6517 ELECTRICAL CHARACTERISTICS (Values are at T = 25C unless otherwise noted.) A Symbol Parameter Conditions Min. Max. Unit BV CollectorBase Breakdown Voltage V CBO 2N6517 I = 100 A, I = 0 350 C E 2N6517C I = 100 A, I = 0 400 C E BV CollectorEmitter Breakdown Voltage* V CEO 2N6517 I = 1 mA, I = 0 350 C B 2N6517C I = 1 mA, I = 0 400 C B BV EmitterBase Breakdown Voltage I = 10 A, I = 0 6 V EBO E C I Collector CutOff Current V = 250 V, I = 0 50 nA CBO CB E I Emitter CutOff Current V = 5 V, I = 0 50 nA EBO EB C h DC Current Gain* FE 2N6517/2N6517C V = 10 V, I = 1 mA 20 CE C 2N6517/2N6517C V = 10 V, I = 10 mA 30 CE C 2N6517/2N6517C V = 10 V, I = 30 mA 30 200 CE C 2N6517/2N6517C V = 10 V, I = 50 mA 20 200 CE C 2N6517/2N6517C V = 10 V, I = 100 mA 15 CE C 2N6517C V = 10 V, I = 5 mA 50 200 CE C V (sat) CollectorEmitter Saturation Voltage I = 10 mA, I = 1 mA 0.3 V CE C B I = 20 mA, I = 2 mA 0.35 C B I = 30 mA, I = 3 mA 0.5 C B I = 50 mA, I = 5 mA 1 C B V (sat) BaseEmitter Saturation Voltage I = 10 mA, I = 1 mA 0.75 V BE C B I = 20 mA, I = 2 mA 0.85 C B I = 30 mA, I = 3 mA 0.9 C B C Output Capacitance V = 20 V, I = 0, f = 1 MHz 6 pF ob CB E f Current Gain Bandwidth Product* I = 10 mA, V = 20 V, f = 20 MHz 40 200 MHz T C CE V (on) BaseEmitter On Voltage I = 100 mA, V = 10 V, 2 V BE C CE Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *Pulse Test: Pulse Width 300 s, Duty Cycle 2% www.onsemi.com 2