X-On Electronics has gained recognition as a prominent supplier of 2N6517G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N6517G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2N6517G ON Semiconductor

2N6517G electronic component of ON Semiconductor
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See Product Specifications
Part No.2N6517G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT 500mA 350V NPN
Datasheet: 2N6517G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.4213 ea
Line Total: USD 1.42 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 1.4213
10 : USD 0.6632
25 : USD 0.4668
100 : USD 0.3895
250 : USD 0.3174

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2N6517G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N6517G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NPN 2N6515, 2N6517 PNP 2N6520 High Voltage Transistors NPN and PNP Features NPN 2N6515, 2N6517 PNP 2N6520 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note 1) V Vdc (BR)CEO (I = 1.0 mAdc, I = 0) 2N6515 250 C B 2N6517, 2N6520 350 CollectorBase Breakdown Voltage V Vdc (BR)CBO (I = 100 Adc, I = 0 ) 2N6515 250 C E 2N6517, 2N6520 350 EmitterBase Breakdown Voltage V Vdc (BR)EBO (I = 10 Adc, I = 0) 2N6515, 2N6517 6.0 E C 2N6520 5.0 Collector Cutoff Current I nAdc CBO (V = 150 Vdc, I = 0) 2N6515 50 CB E (V = 250 Vdc, I = 0) 2N6517, 2N6520 50 CB E Emitter Cutoff Current I nAdc EBO (V = 5.0 Vdc, I = 0) 2N6515, 2N6517 50 EB C (V = 4.0 Vdc, I = 0) 2N6520 50 EB C ON CHARACTERISTICS (Note 1) DC Current Gain h FE (I = 1.0 mAdc, V = 10 Vdc) 2N6515 35 C CE 2N6517, 2N6520 20 (I = 10 mAdc, V = 10 Vdc) 2N6515 50 C CE 2N6517, 2N6520 30 (I = 30 mAdc, V = 10 Vdc) 2N6515 50 300 C CE 2N6517, 2N6520 30 200 (I = 50 mAdc, V = 10 Vdc) 2N6515 45 220 C CE 2N6517, 2N6520 20 200 (I = 100 mAdc, V = 10 Vdc) 2N6515 25 C CE 2N6517, 2N6520 15 CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 10 mAdc, I = 1.0 mAdc) 0.30 C B (I = 20 mAdc, I = 2.0 mAdc) 0.35 C B (I = 30 mAdc, I = 3.0 mAdc) 0.50 C B (I = 50 mAdc, I = 5.0 mAdc) 1.0 C B BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 10 mAdc, I = 1.0 mAdc) 0.75 C B (I = 20 mAdc, I = 2.0 mAdc) 0.85 C B (I = 30 mAdc, I = 3.0 mAdc) 0.90 C B BaseEmitter On Voltage V 2.0 Vdc BE(on) (I = 100 mAdc, V = 10 Vdc) C CE SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product (Note 1) f 40 200 MHz T (I = 10 mAdc, V = 20 Vdc, f = 20 MHz) C CE CollectorBase Capacitance C 6.0 pF cb (V = 20 Vdc, I = 0, f = 1.0 MHz) CB E EmitterBase Capacitance C pF eb (V = 0.5 Vdc, I = 0, f = 1.0 MHz) 2N6515, 2N6517 80 EB C 2N6520 100 SWITCHING CHARACTERISTICS TurnOn Time t 200 s on (V = 100 Vdc, V = 2.0 Vdc, I = 50 mAdc, I = 10 mAdc) CC BE(off) C B1 TurnOff Time t 3.5 s off (V = 100 Vdc, I = 50 mAdc, I = I = 10 mAdc) CC C B1 B2 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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