2N6520 PNP Epitaxial Silicon Transistor June 2009 2N6520 PNP Epitaxial Silicon Transistor Features High Voltage Transistor Collector-Emitter Voltage: V = -350V CBO Collector Dissipation: P (max)=625mW C Complement to 2N6517 TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings* T = 25C unless otherwise noted A Symbol Parameter Value Unit V Collector-Base Voltage -350 V CBO V Collector-Emitter Voltage -350 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current -500 mA C I Base Current -250 mA B P Collector Power Dissipation 0.625 W C Derate above 25C5mW/ C T Junction Temperature 150 C J T Storage Temperature -55 to +150 C STG 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N6520 Rev. B1 1 2N6520 PNP Epitaxial Silicon Transistor Electrical Characteristics T =25 C unless otherwise noted A Symbol Parameter Test Conditions Min. Max. Units BV Collector-Base Breakdown Voltage I = -100A, I =0 -350 V CBO C E BV * Collector-Emitter Breakdown Voltage I = -1mA, I =0 -350 V CEO C B BV Emitter-Base Breakdown Voltage I = -10A, I =0 -5 V EBO E C I Collector Cut-off Current V = -250V, I =0 -50 nA CBO CB E I Emitter Cut-off Current V = -4V, I =0 -50 nA EBO EB C h * DC Current Gain V = -10V, I = -1mA 20 FE CE C V = -10V, I = -10mA 30 CE C V = -10V, I = -30mA 30 200 CE C V = -10V, I = -50mA 20 200 CE C V = -10V, I = -100mA 15 CE C V (sat) Collector-Emitter Saturation Voltage I = -10mA, I = -1mA -0.30 V CE C B I = -20mA, I = -2mA -0.35 V C B I = -30mA, I = -3mA -0.50 V C B I = -50mA, I = -5mA -1 V C B V (sat) Base-Emitter Saturation Voltage I = -10mA, I = -1mA -0.75 V BE C B I = -20mA, I = -2mA -0.85 V C B I = -30mA, I = -3mA -0.90 V C B V (on) Base-Emitter On Voltage V = -10V, I = -100mA -2 V BE CE C f * Current Gain Bandwidth Product V = -20V, I = -10mA, f=20MHz 40 200 MHz T CE C C Output Capacitance V = -20V, I =0, f=1MHz 6 pF ob CB E C Emitter-Base Capacitance V = -0.5V, I =0, f=1MHz 100 pF EB EB C t Turn On Time V (off)= -2V, V = -100V 200 ns ON BE CC I = -50mA, I = -10mA C B1 t Turn Off Time V = -100V, I = -50mA 3.5 ns OFF CC C I =I = -10mA B1 B2 * Pulse Test: Pulse Width300s, Duty Cycle 2% 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N6520 Rev. B1 2