X-On Electronics has gained recognition as a prominent supplier of 2SA1417T-TD-E Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SA1417T-TD-E Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SA1417T-TD-E ON Semiconductor

2SA1417T-TD-E electronic component of ON Semiconductor
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See Product Specifications
Part No.2SA1417T-TD-E
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: ON Semiconductor Bipolar Transistors - BJT BIP PNP 2A 100V
Datasheet: 2SA1417T-TD-E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.728 ea
Line Total: USD 1.73 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 26 Nov to Mon. 02 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 0.4811
2000 : USD 0.4796
3000 : USD 0.4779
4000 : USD 0.4763
5000 : USD 0.4746
10000 : USD 0.4729
20000 : USD 0.4712
25000 : USD 0.4695
50000 : USD 0.4677

0
Ship by Tue. 03 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 0.6069
10 : USD 0.4886
30 : USD 0.439
100 : USD 0.376
500 : USD 0.3475
1000 : USD 0.3302

0
Ship by Fri. 22 Nov to Tue. 26 Nov
MOQ : 1
Multiples : 1
1 : USD 1.728
10 : USD 0.8316
100 : USD 0.4633
500 : USD 0.3661
1000 : USD 0.2927
2000 : USD 0.2678

0
Ship by Fri. 22 Nov to Tue. 26 Nov
MOQ : 3
Multiples : 1
3 : USD 0.5726
25 : USD 0.5278
41 : USD 0.384
112 : USD 0.3623

0
Ship by Tue. 26 Nov to Mon. 02 Dec
MOQ : 29
Multiples : 20
29 : USD 0.5133

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SA1417T-TD-E from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SA1417T-TD-E and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Ordering number : EN2006D 2SA1417/2SC3647 Bipolar Transistor 2SA1417 / 2SC3647 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =(--)100V, I =0A (--)100 nA CBO CB E Emitter Cutoff Current I V =(--)4V, I =0A (--)100 nA EBO EB C DC Current Gain h V =(--)5V, I =(--)100mA 100* 400* FE CE C Gain-Bandwidth Product f V =(--)10V, I =(--)100mA 120 MHz T CE C Output Capacitance Cob V =(--)10V, f=1MHz (25)16 pF CB Collector-to-Emitter Saturation Voltage V (sat) I =(--)1A, I =(--)100mA (--0.22)0.13 (--0.6)0.4 V CE C B Base-to-Emitter Saturation Voltage V (sat) I =(--)1A, I =(--)100mA (--)0.85 (--)1.2 V BE C B Collector-to-Base Breakdown Voltage V I =(--)10A, I =0A (--)120 V (BR)CBO C E Collector-to-Emitter Breakdown Voltage V I =(--)1mA, R = (--)100 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I =(--)10A, I =0A (--)6 V (BR)EBO E C Turn-On Time t (80)80 ns on Storage Time t See speci ed Test Circuit. (750)1000 ns stg Fall Time t (40)50 ns f * : The 2SA1417 / 2S3647 are classi ed by 100mA h as follws : FE Rank R S T h 100 to 200 140 to 280 200 to 400 FE Switching Time Test Circuit I B1 PW=20s OUTPUT D.C.1% I B2 INPUT R V B R R L + + 50 100F 470F V = --5V V =50V BE CC I =10I = --10I =0.7A C B1 B2 For PNP, the polarity is reversed. Ordering Information Device Package Shipping memo 2SA1417S-TD-E PCP 1,000pcs./reel 2SA1417T-TD-E PCP 1,000pcs./reel Pb Free 2SC3647S-TD-E PCP 1,000pcs./reel 2SC3647T-TD-E PCP 1,000pcs./reel No.2006-2/7

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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