Ordering number:ENN4135 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1855/2SC4837 50V/4A Switching Applications Applications Package Dimensions Power supplies, relay drivers, lamp drivers. unit:mm 2084B Features 2SA1855/2SC4837 4.5 Adoption of FBET and MBIT processes. 1.9 2.6 10.5 1.2 1.4 Large allowable collector dissipation. Low saturation voltage. Wide ASO and large current capacity. Usage of radial taping to meet automatic mounting. 1.2 0.5 1.6 0.5 12 3 1 : Emitter ( ) : 2SA1855 2 : Collector 3 : Base Specifications 2.5 2.5 SANYO : FLP Absolute Maximum Ratings at Ta = 25C Plarameter Ssymbo Csondition Rtating Uni CVollector-to-Base Voltage (V)60 CBO CVollector-to-Emitter Voltage (V)50 CEO EVmitter-to-Base Voltage (V)6 EBO CIollector Current (A)4 C CIolletor Current (Pulse) (A)6 CP CPollector Dissipation 1W.5 C Jjunction Temperature T 150 C Sgtorage Temperature Tst 55 to +150 C Electrical Characteristics at Ta = 25C Ratings Plarameter Ssymbo Condition Unit mpintxy ma CIollector Cutoff Current V =()40V, I=10 (A) CBO CB E EImitter Cutoff Current V =()4V, I=10 (A) EBO EB C h 1V =()2V, I=*()10mA 1*00 400 FE CE C DC Current Gain h 2V =()2V, I=0()3A 4 FE CE C Gfain Bandwidth Product V =()10V, I=0()50mA 1z5 MH T CE C OCutput Capacitance V=5()10V, f=1MHz (F39)2 p ob CB * : The 2SA1855/2SC4837 are classified by 100mA h as follows : Continued on next page. FE RRank S T h1000 to 2001040 to 28 200 to 40 FE Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircrafts control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 91003TN (KT)/91098HA (KT)/5132MH (KOTO) No.41351/4 1.0 7.5 8.52SA1855/2SC4837 Continued from preceding page. Ratings Plarameter Ssymbo Condition Unit mpintxy ma ()350)(V700 m CVollector-to-Emitter Saturation Voltage I =()2A, I =()100mA CE(sat) C B 1090 5V0 m BVase-to-Emitter Saturation Voltage I =()2A, I=4()100mA (2)0.9(V)1. BE(sat) C B CVollector-to-Base Breakdown Voltage I =10A, I=00 (V)6 (BR)CBO C E CVollector-to-Emitter Breakdown Voltage I =1mA, R = (V)50 (BR)CEO C BE EVmitter-to-Base Breakdown Voltage I =10A, I=60 (V) (BR)EBO E C Tturn-ON Time S0ee specified Test CIrcuit 7sn on (s450) n Sttorage Time See specified Test CIrcuit stg 6s50 n Ftall Time S5ee specified Test Circuit (s30)3 n f Switching Time Test Circuit PW=20 s DC1% I B1 OUTPUT I B2 INPUT R B R L 25 V R 50 + + 100 F 470 F V =25V V = --5V BE CC I =10I = --10I =1A C B1 B2 I -- V I -- V C CE C CE 5 --5 2SC4837 2SA1855 --4 4 --3 3 --2 2 --1 1 I =0 I =0 B B 0 0 0 --0.4 --0.8 --1.2 --1.6 --2.0 0 0.4 0.8 1.2 1.6 2.0 Collector-to-Emitter Voltage, V V Collector-to-Emitter Voltage, V V ITR04917 ITR04918 CE CE I -- V I -- V C CE C CE 2.0 --2.0 2SC4837 2SA1855 --1.6 1.6 --1.2 1.2 --0.8 0.8 --0.4 0.4 1mA I =0 I =0 B B 0 0 0 --4 --8 --12 --16 --20 04 8 12 16 20 Collector-to-Emitter Voltage, V V Collector-to-Emitter Voltage, V V ITR04919 ITR04920 CE CE No.41352/4 --5mA --10mA 2mA 5mA 3mA --2mA 4mA --4mA --20mA 6mA 5mA 10mA 7mA --6mA --8mA 8mA 80mA 20mA 100mA 60mA 40mA --10mA --50mA --12mA --100mA --200mA Collector Current, I A Collector Current, I A C C Collector Current, I A Collector Current, I A C C