X-On Electronics has gained recognition as a prominent supplier of 2SA2016-TD-E Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SA2016-TD-E Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SA2016-TD-E ON Semiconductor

2SA2016-TD-E electronic component of ON Semiconductor
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See Product Specifications
Part No.2SA2016-TD-E
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 50 V 7 A 330MHz 3.5 W Surface Mount PCP
Datasheet: 2SA2016-TD-E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7707 ea
Line Total: USD 0.77 
Availability - 749
Ship by Mon. 09 Dec to Thu. 12 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
749
Ship by Mon. 09 Dec to Thu. 12 Dec
MOQ : 1
Multiples : 1
1 : USD 0.7707
10 : USD 0.633
30 : USD 0.5642
100 : USD 0.4972
500 : USD 0.4264
1000 : USD 0.4055

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Category
Brand Category
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

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Ordering number : EN6309D 2SA2016/2SC5569 Bipolar Transistor 2SA2016 / 2SC5569 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Collector Current I (--)7 A C Collector Current (Pulse) I (--)10 A CP Base Current I (--)1.2 A B 2 When mounted on ceramic substrate (250mm 0.8mm) 1.3 W Collector Dissipation P C Tc=25C 3.5 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =(--)40V, I =0A (--)0.1 A CBO CB E Emitter Cutoff Current I V =(--)4V, I =0A (--)0.1 A EBO EB C DC Current Gain h V =(--)2V, I =(--)500mA 200 560 FE CE C Gain-Bandwidth Product f V =(--)10V, I =(--)500mA (290)330 MHz T CE C Output Capacitance Cob V =(--)10V, f=1MHz (50)28 pF CB V (sat)1 I =(--)3.5A, I =(--)175mA (--230)160 (--390)240 mV CE C B Collector-to-Emitter Saturation Voltage V (sat)2 I =(--)2A, I =(--)40mA (--240)110 (--400)170 mV CE C B Base-to-Emitter Saturation Voltage V (sat) I =(--)2A, I =(--)40mA (--)0.83 (--)1.2 V BE C B Collector-to-Base Breakdown Voltage V I =(--)10A, I =0A (--50)100 V (BR)CBO C E Collector-to-Emitter Breakdown Voltage V I =(--)100A, R =0 (--50)100 V (BR)CES C BE Collector-to-Emitter Breakdown Voltage V I =(--)1mA, R = (--)50 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I =(--)10A, I =0A (--)6 V (BR)EBO E C Turn-On Time t (40)30 ns on Storage Time t See speci ed Test Circuit. (225)420 ns stg Fall Time t 25 ns f Switching Time Test Circuit I B1 PW=20s OUTPUT D.C.1% I B2 INPUT R B V R R L 50 + + 100F 470F V = --5V V =25V BE CC I =20I = --20I =2.5A C B1 B2 For PNP, the polarity is reversed. Ordering Information Device Package Shipping memo 2SA2016-TD-E PCP 1,000pcs./reel Pb Free 2SC5569-TD-E PCP 1,000pcs./reel No.6309-2/8

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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