Ordering number : EN1788C 2SA1418/2SC3648 Bipolar Transistor 2SA1418 / 2SC3648 Continued from preceding page. Parameter Symbol Conditions Ratings Unit 500 mW Collector Dissipation P C 2 When mounted on ceramic substrate (250mm 0.8mm) 1.3 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. at Ta=25C Electrical Characteristics Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =(--)120V, I =0A (--)0.1 A CBO CB E Emitter Cutoff Current I V =(--)4V, I =0A (--)0.1 A EBO EB C h1V =(--)5V, I =(--)100mA 100* 400* FE CE C DC Current Gain h2V =(--)5V, I =(--)10mA 90 FE CE C Gain-Bandwidth Product f V =(--)10V, I =(--)50mA 120 MHz T CE C Output Capacitance Cob V =(--)10V, f=1MHz (11)8 pF CB Collector-to-Emitter Saturation Voltage V (sat) I =(--)250mA, I =(--)25mA (--0.2)0.12 (--0.5)0.4 V CE C B Base-to-Emitter Saturation Voltage V (sat) I =(--)250mA, I =(--)25mA (--)0.85 (--)1.2 V BE C B Collector-to-Base Breakdown Voltage V I =(--)10A, I =0A (--)180 V (BR)CBO C E Collector-to-Emitter Breakdown Voltage V I =(--)1mA, R = (--)160 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I =(--)10 A, I =0A (--)6 V (BR)EBO E C Turn-ON Time t (60)50 ns on Storage Time t See speci ed Test Circuit. (900)1000 ns stg Fall Time t (60)60 ns f : The 2SA1418 / 2SC3648 are classi ed by 100mA h as follows : * FE Rank R S T h 100 to 200 140 to 280 200 to 400 FE Switching Time Test Circuit I B1 PW=20 s D.C.1% I B2 INPUT R B V 333 R 50 + + 100 F 470 F --5V 100V I =20I =--20I =300mA C B1 B2 (For PNP, the polarity is reversed) Ordering Information Device Package Shipping memo 2SA1418S-TD-E PCP 1,000pcs./reel 2SC3648S-TD-E PCP 1,000pcs./reel Pb Free 2SC3648T-TD-E PCP 1,000pcs./reel No.1788-2/7