X-On Electronics has gained recognition as a prominent supplier of 2SC5569-TD-E Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SC5569-TD-E Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SC5569-TD-E ON Semiconductor

Name: 2SC5569-TD-E
Brand: ON Semiconductor
SKU: 2SC5569TDE_ON Semiconductor
Availability: OutOfStock
Rating: 5 (11 reviews)

2SC5569-TD-E electronic component of ON Semiconductor

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Part No.	2SC5569-TD-E
Manufacturer:	ON Semiconductor
Category:	Bipolar Transistors - BJT
Description:	Bipolar (BJT) Transistor NPN 50 V 7 A 330MHz 1.3 W Surface Mount SOT-89/PCP-1
Datasheet:	2SC5569-TD-E Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1000: USD 0.4234 ea
Line Total: USD 423.4

Availability - 0

MOQ: 1000 Multiples: 1000
Pack Size: 1000

2SC5569-TD-E More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
1807 Ship by Mon. 02 Dec to Fri. 06 Dec MOQ : 1 Multiples : 1	1 : USD 0.9527 10 : USD 0.6865 25 : USD 0.679 100 : USD 0.5135 250 : USD 0.4935 500 : USD 0.4385 1000 : USD 0.3439

We are delighted to provide the 2SC5569-TD-E from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SC5569-TD-E and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

Ordering number : EN6309D 2SA2016/2SC5569 Bipolar Transistor 2SA2016 / 2SC5569 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Collector Current I (--)7 A C Collector Current (Pulse) I (--)10 A CP Base Current I (--)1.2 A B 2 When mounted on ceramic substrate (250mm 0.8mm) 1.3 W Collector Dissipation P C Tc=25C 3.5 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =(--)40V, I =0A (--)0.1 A CBO CB E Emitter Cutoff Current I V =(--)4V, I =0A (--)0.1 A EBO EB C DC Current Gain h V =(--)2V, I =(--)500mA 200 560 FE CE C Gain-Bandwidth Product f V =(--)10V, I =(--)500mA (290)330 MHz T CE C Output Capacitance Cob V =(--)10V, f=1MHz (50)28 pF CB V (sat)1 I =(--)3.5A, I =(--)175mA (--230)160 (--390)240 mV CE C B Collector-to-Emitter Saturation Voltage V (sat)2 I =(--)2A, I =(--)40mA (--240)110 (--400)170 mV CE C B Base-to-Emitter Saturation Voltage V (sat) I =(--)2A, I =(--)40mA (--)0.83 (--)1.2 V BE C B Collector-to-Base Breakdown Voltage V I =(--)10A, I =0A (--50)100 V (BR)CBO C E Collector-to-Emitter Breakdown Voltage V I =(--)100A, R =0 (--50)100 V (BR)CES C BE Collector-to-Emitter Breakdown Voltage V I =(--)1mA, R = (--)50 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I =(--)10A, I =0A (--)6 V (BR)EBO E C Turn-On Time t (40)30 ns on Storage Time t See speci ed Test Circuit. (225)420 ns stg Fall Time t 25 ns f Switching Time Test Circuit I B1 PW=20s OUTPUT D.C.1% I B2 INPUT R B V R R L 50 + + 100F 470F V = --5V V =25V BE CC I =20I = --20I =2.5A C B1 B2 For PNP, the polarity is reversed. Ordering Information Device Package Shipping memo 2SA2016-TD-E PCP 1,000pcs./reel Pb Free 2SC5569-TD-E PCP 1,000pcs./reel No.6309-2/8

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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