LOT No. LOT No. Ordering number : ENA1120A 2SC5646A RF Transistor 2SC5646A Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =5V, I =0A 1.0 A CBO CB E Emitter Cutoff Current I V =1V, I =0A 10 A EBO EB C DC Current Gain h V =1V, I =5mA 100 160 FE CE C f1V =1V, I =5mA 8 10 GHz T CE C Gain-Bandwidth Product f2V =3V, I =15mA 12.5 GHz T CE C Output Capacitance Cob 0.55 0.7 pF V =1V, f=1MHz CB Reverse Transfer Capacitance Cre 0.4 pF 2 S21e1V =1V, I =5mA, f=2GHz 8 9.5 dB CE C Forward Transfer Gain 2 S21e2V =3V, I =15mA, f=2GHz 10.5 dB CE C Noise Figure NF V =1V, I =3mA, f=2GHz 1.5 2.3 dB CE C Ordering Information Device Package Shipping memo 2SC5646A-TL-H SSFP 8,000pcs./reel Pb Free and Halogem Free I -- V I -- V C CE C BE 30 9 8 25 7 6 20 5 15 4 3 10 2 5 1 I =0mA B 0 0 0 1 2 3 4 0 0.2 0.4 0.6 0.8 1.0 1.2 Collector-to-Emitter Voltage, V -- V IT15425 Base-to-Emitter Voltage, V -- V IT15426 CE BE No. A1120-2/9 0.01mA 0.02mA 0.03mA 0.04mA 0.05mA V =3V CE 1V Collector Current, I -- mA C Collector Current, I -- mA C