Ordering number : EN6913B 2SA2040/2SC5707 Bipolar Transistor 2SA2040 / 2SC5707 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Base Current I (--)2 A B 1.0 W Collector Dissipation P C Tc=25C15W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =(--)40V, I =0A (--)0.1 A CBO CB E Emitter Cutoff Current I V =(--)4V, I =0A (--)0.1 A EBO EB C DC Current Gain h V =(--)2V, I =(--)500mA 200 560 FE CE C Gain-Bandwidth Product f V =(--)10V, I =(--)500mA (290)330 MHz T CE C Output Capacitance Cob V =(--)10V, f=1MHz (50)28 pF CB V (sat)1 I =(--)3.5A, I =(--)175mA (--230)160 (--390)240 mV CE C B Collector-to-Emitter Saturation Voltage V (sat)2 I =(--)2A, I =(--)40mA (--240)110 (--400)170 mV CE C B Base-to-Emitter Saturation Voltage V (sat) I =(--)2A, I =(--)40mA (--)0.83 (--)1.2 V BE C B Collector-to-Base Breakdown Voltage V I =(--)10A, I =0A (--50)100 V (BR)CBO C E Collector-to-Emitter Breakdown Voltage V I =(--)100 A, R =0 (--50)100 V (BR)CES C BE Collector-to-Emitter Breakdown Voltage V I =(--)1mA, R = (--)50 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I =(--)10A, I =0A (--)6 V (BR)EBO E C Turn-On Time t (40)30 ns on Storage Time t See speci ed Test Circuit. (225)420 ns stg Fall Time t 25 ns f Switching Time Test Circuit I PW=20s B1 D.C.1% I B2 OUTPUT INPUT R B R V L R + + 50 100F 470F V = --5V V =25V BE CC 20I = --20I =I =2.5A B1 B2 C For PNP, the polarity is reversed. Ordering Information Device Package Shipping memo 2SA2040-E TP 500pcs./bag 2SC5707-E TP 500pcs./bag Pb Free 2SA2040-TL-E TP-FA 700pcs./reel 2SC5707-TL-E TP-FA 700pcs./reel No.6913-2/10