2SC5994 Bipolar Transistor 50V, 2A, Low VCE(sat), NPN Single www.onsemi.com Features Adoption of MBIT Process Low Collector to Emitter Saturation Voltage Large Current Capacity High Speed Switching ELECTRICAL CONNECTION 2 Typical Applications 1:Base Voltage Regulators 2 : Collector 1 3:Emitter Relay Drivers Lamp Drivers 3 Electrical Equipment MARKING SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1, 2) Parameter SymbolValue Unit 1 Collector to Base Voltage V 100V 2 CBO 3 V 100V CES Collector to Emitter Voltage SOT-89 / PCP-1 V 50V CEO 3 1 2 Emitter to Base Voltage V 6V EBO Collector Current I 2A C Collector Current (Pulse) I 4A CP ORDERING INFORMATION Base Current I 400mA B See detailed ordering and shipping (Note 2) 1.3 W information on page 5 of this data sheet. Collector Dissipation P C Tc=25C 3.5 W Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 Note 2 : Surface mounted on ceramic substrate(450mm 0.8mm) Semiconductor Components Industries, LLC, 2016 1 Publication Order Number : April 2016 - Rev. 2 2SC5994/D FJ LOT No.2SC5994 ELECTRICAL CHARACTERISTICS at Ta = 25C (Note 3) Value Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =50V, I=0A 1 A CBO CB E Emitter Cutoff Current I V =4V, I=0A 1 A EBO EB C h1 V =2V, I=100mA 200 560 FE CE C DC Current Gain h2 V =2V,I=1.5A 40 FE CE C Gain-Bandwidth Product f V =10V, I=300mA 420 MHz T CE C Output Capacitance Cob V =10V, f=1MHz 9 pF CB Collector to Emitter Saturation V(sat) I =1A, I=50mA 135 300mV CE C B Voltage Base to Emitter Saturation Voltage V(sat) I =1A, I=50mA 0.9 1.2V BE C B Collector to Base Breakdown V I =10 A, I=0A 100 V (BR)CBO C E Voltage V I =100 A, R =0 100 V Collector to Emitter Breakdown (BR)CES C BE Voltage V I =1mA, R = 50 V (BR)CEO C BE 6 Emitter to Base Breakdown Voltage V I =10 A, I =0A V (BR)EBO E C Turn-On Time t 30 ns on See specified Test 330 Storage Time t ns stg Circuit Fall Time 40 t ns f Note 3 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit www.onsemi.com 2