Ordering number : EN8275A 2SA2169/2SC6017 Bipolar Transistor 2SA2169 / 2SC6017 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Base Current I (--)2 A B 0.95 W Collector Dissipation P C Tc=25C20W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =(--)40V, I =0A (--)10 A CBO CB E Emitter Cutoff Current I V =(--)4V, I =0A (--)10 A EBO EB C DC Current Gain h V =(--)2V, I =(--)1A 200 (560)700 FE CE C Gain-Bandwidth Product f V =(--)5V, I =(--)1A (130)200 MHz T CE C Output Capacitance Cob V =(--)10V, f=1MHz (90)60 pF CB Collector-to-Emitter Saturation Voltage V (sat) I =(--)5A, I =(--)250mA (--290)180 (--580)360 mV CE C B Base-to-Emitter Saturation Voltage V (sat) I =(--)5A, I =(--)250mA (--)0.93 (--)1.4 V BE C B Collector-to-Base Breakdown Voltage V I =(--)100A, I =0A (--50)100 V (BR)CBO C E Collector-to-Emitter Breakdown Voltage V I =(--)1mA, R = (--)50 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I =(--)100 A, I =0A (--)6 V (BR)EBO E C Turn-On Time t (70)40 ns on Storage Time t See speci ed Test Circuit. (650)1000 ns stg Fall Time t (60)80 ns f Switching Time Test Circuit I B1 PW=20s OUTPUT D.C.1% I B2 INPUT R V B R R L + 50 + 100F 470F I =20I = --20I =3A C B1 B2 V = --5V V =20V BE CC For PNP, the polarity is reversed. Ordering Information Device Package Shipping memo 2SA2169-E TP 500pcs./bag 2SC6017-E TP 500pcs./bag Pb Free 2SA2169-TL-E TP-FA 700pcs./reel 2SC6017-TL-E TP-FA 700pcs./reel No.8275-2/10