2SB1202/2SD1802 Bipolar Transistor ()50 V, ()3 A, Low V (sat) (PNP)NPN CE Single TP/TPFA Features www.onsemi.com Adoption of FBET and MBIT Processes Large Current Capacitance and Wide ASO 2.4 Low Collector to Emitter Saturation Voltage Fast Switching Speed 1 Small and Slim Package Making it Easy to Make 2SB1202/2SD1802used Sets Smaller 3 These Devices are PbFree and are RoHS Compliant (For PNP, the polarity is reversed.) Applications Voltage Regulators, Relay Drivers, Lamp Drivers, Electrical Equipment ABSOLUTE MAXIMUM RATINGS at T = 25C A Parameter Symbol Conditions Ratings Unit Collector to Base Voltage V ()60 V CBO IPAK / TP DPAK / TPFA CASE 369AJ CASE 369AH Collector to Emitter Voltage V ()50 V CEO Emitter to Base Voltage V ()6 V EBO Collector Current I ()3 A C MARKING DIAGRAM I Collector Current (Pulse) ()6 A CP Collector Dissipation P 1 W C B1202 D1802 T = 25C 15 W C C Junction Temperature T 150 J C Storage Temperature T 55 to STG +150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 8 of this data sheet. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: March, 2019 Rev. 0 2SB1202/D2SB1202/2SD1802 ELECTRICAL CHARACTERISTICS at T = 25C A Ratings Parameter Symbol Conditions Min Typ Max Unit Collector Cutoff Current I A V = (-)40 V, I = 0 A (-)1 CBO CB E Emitter Cutoff Current I V = (-)4V, I = 0 A (-)1 A EBO EB C DC Current Gain h 1 V = (-)2 V, 100* 560* FE CE I = (-)100 mA C h 2 V = (-)2 V, 35 FE CE I = (-)3 A C GainBandwidth Product f V = (-)10 V, 150 MHz T CE I = (-)50 mA C Output Capacitance Cob V = (-)10 V, (39)25 pF CB f = 1 MHz Collector to Emitter Saturation Voltage V (sat) I = (-)2 A, (0.35)0.19 (-0.7)0.5 V CE C I = (-)100 mA B Base to Emitter Saturation Voltage V (sat) V = (-)2 V, (-)0.94 (-)1.2 V BE CE I = (-)100 mA C Collector to Base Breakdown Voltage V I = (-)10 A, I = 0 A V (-)60 (BR)CBO C E Collector to Emitter Breakdown Voltage V I = (-)1 mA, R = (-)50 V (BR)CEO C BE Emitter to Base Breakdown Voltage V I = (-)10 A, I = 0 A (-)6 V (BR)EBO E C See specified Test TurnOn Time ton 70 ns Circuit tstg Storage Time (450)650 ns Fall Time tf 35 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *The 2SB1202/2SD1802 are classified by 100 mA h as follows : FE Rank R S T U h 100 to 200 140 to 280 200 to 400 280 to 560 FE Switching Time Test Circuit I B1 PW = 20 s OUTPUT D.C. 1% I B2 INPUT R V B R RL 25 50 + + 100 F 470 F V = 5 V V = 25 V BE CC I = 10 I = 10 I = 1 A C B1 B2 For PNP, the polarity is reversed. www.onsemi.com 2