2SJ661-DL-1E ON Semiconductor

Ordering number : EN8586A 2SJ661 P-Channel Power MOSFET 2SJ661 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Avalanche Energy (Single Pulse) *1 E 250 mJ AS Avalanche Current *2 I --38 A AV Note : *1 V =--30V, L=200H, I =--38A (Fig.1) DD AV *2 L200H, single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. at Ta=25C Electrical Characteristics Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =--1mA, V =0V --60 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =--60V, V =0V --1 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =--10V, I =--1mA --1.2 --2.6 V GS DS D Forward Transfer Admittance yfs V =--10V, I =--19A 18 31 S DS D R (on)1 I =--19A, V =--10V 29.5 39 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =--19A, V =--4V 40 56 m DS D GS Input Capacitance Ciss 4360 pF Output Capacitance Coss V =--20V, f=1MHz 470 pF DS Reverse Transfer Capacitance Crss 335 pF Turn-ON Delay Time t (on) 33 ns d Rise Time t 285 ns r See Fig.2 Turn-OFF Delay Time t (off) 295 ns d Fall Time t 195 ns f Total Gate Charge Qg 80 nC Gate-to-Source Charge Qgs V =--30V, V =--10V, I =--38A 15 nC DS GS D Gate-to-Drain Miller Charge Qgd 12 nC Diode Forward Voltage V I =--38A, V =0V --1.0 --1.2 V SD S GS Fig.1 Avalanche Resistance Test Circuit Fig.2 Switching Time Test Circuit V V = --30V IN DD L 0V --10V 50 I = --19A RG D V IN R =1.58 L D V OUT 2SJ661 PW=10s 0V D.C.1% V 50 DD --10V G 2SJ661 P.G 50 S Ordering Information Device Package Shipping memo 2SJ661-1E TO-262-3L 50pcs./magazine Pb Free 2SJ661-DL-1E TO-263-2L 800pcs./reel No.8586-2/9