X-On Electronics has gained recognition as a prominent supplier of 50A02SS-TL-E Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 50A02SS-TL-E Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

50A02SS-TL-E ON Semiconductor

50A02SS-TL-E electronic component of ON Semiconductor
50A02SS-TL-E ON Semiconductor
50A02SS-TL-E Bipolar Transistors - BJT
50A02SS-TL-E  Semiconductors

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See Product Specifications
Part No. 50A02SS-TL-E
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 50 V 400 mA 690MHz 200 mW Surface Mount 3-SSFP
Datasheet: 50A02SS-TL-E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Obsolete
Availability Price Quantity
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MOQ : 8000
Multiples : 8000
8000 : USD 0.0886
16000 : USD 0.0756
24000 : USD 0.0709
56000 : USD 0.0628
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Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.5325
10 : USD 0.3823
100 : USD 0.2162
500 : USD 0.1432
1000 : USD 0.1097
2000 : USD 0.0955
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Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.5325
10 : USD 0.3823
100 : USD 0.2162
500 : USD 0.1432
1000 : USD 0.1097
2000 : USD 0.0955
N/A

Obsolete
0
MOQ : 8000
Multiples : 8000
8000 : USD 0.0449
24000 : USD 0.0442
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Multiples : 16000
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MOQ : 1
Multiples : 1
1 : USD 0.3953
10 : USD 0.245
100 : USD 0.0724
1000 : USD 0.0568
2500 : USD 0.0545
8000 : USD 0.0534
96000 : USD 0.0523
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Obsolete
0
MOQ : 162
Multiples : 1
162 : USD 0.0433
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MOQ : 191
Multiples : 1
191 : USD 0.0549
250 : USD 0.0532
500 : USD 0.0515
1000 : USD 0.0498
3000 : USD 0.0481
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Obsolete
0
MOQ : 1283
Multiples : 1
1283 : USD 0.1405
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MOQ : 162
Multiples : 1
162 : USD 0.0442
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Obsolete
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MOQ : 191
Multiples : 1
191 : USD 0.0457
250 : USD 0.0454
500 : USD 0.0452
1000 : USD 0.045
3000 : USD 0.0447
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Obsolete
0
MOQ : 794
Multiples : 1
794 : USD 0.1198
1000 : USD 0.1159
2500 : USD 0.1125
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Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
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We are delighted to provide the 50A02SS-TL-E from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 50A02SS-TL-E and other electronic components in the Bipolar Transistors - BJT category and beyond.

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LOT No. LOT No. Ordering number : EN7491A 50A02SS Bipolar Transistor 50A02SS Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V = --40V, I =0A --100 nA CBO CB E Emitter Cutoff Current I V = --4V, I =0A --100 nA EBO EB C DC Current Gain h V = --2V, I = --10mA 200 500 FE CE C Gain-Bandwidth Product f V = --10V, I = --50mA 690 MHz T CE C Output Capacitance Cob V = --10V, f=1MHz 3.8 pF CB Collector-to-Emitter Saturation Voltage V (sat) I = --100mA, I = --10mA --60 --120 mV CE C B Base-to-Emitter Saturation Voltage V (sat) I = --100mA, I = --10mA --0.9 --1.2 V BE C B Collector-to-Base Breakdown Voltage V I = --10 A, I =0A --50 V (BR)CBO C E Collector-to-Emitter Breakdown Voltage V I = --1mA, R = --50 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I = --10A, I =0A --5 V (BR)EBO E C Turn-ON Time t 30 ns on Storage Time t See speci ed Test Circuit. 170 ns stg Fall Time t 30 ns f Switching Time Test Circuit I B1 PW=20 s OUTPUT D.C.1% I B2 INPUT R V B R R L 50 ++ 220 F 470 F V =5V V = --25V BE CC I =20I = --20I = --200mA C B1 B2 Ordering Information Device Package Shipping memo 50A02SS-TL-E SSFP 8,000pcs./reel Pb Free No.7491-2/7

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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