50C02CH Bipolar Transistor 50V, 0.5A, Low VCE(sat), NPN Single www.onsemi.com Features Large Current Capacitance Low Collector to Emitter Saturation Voltage (Resistance): R (sat) typ=175m I =0.5A, I =50mA CE C B ELECTRICAL CONNECTION Ultrasmall Package Facilitates Miniaturization in End Products Small ON-Resistance (Ron) 3 1:Base 1 2 : Emitter Typical Applications 3 : Collector Low-Frequency Amplifier High Speed Switching 2 Small Motor Drive Muting Circuit MARKING 3 SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1, 2) 1 Parameter SymbolValue Unit 2 CPH3 Collector to Base Voltage V 60V CBO Collector to Emitter Voltage V 50V CEO Emitter to Base Voltage V 5V EBO ORDERING INFORMATION Collector Current I 500 mA C See detailed ordering and shipping Collector Current (Pulse) I 1.0A information on page 5 of this data sheet. CP Collector Dissipation (Note 2) P 700mW C Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 Note 2 : Surface mounted on ceramic substrate(600mm 0.8mm) Semiconductor Components Industries, LLC, 2016 1 Publication Order Number : April 2016 - Rev. 2 50C02CH/D CX LOT No.50C02CH ELECTRICAL CHARACTERISTICS at Ta = 25C (Note 3) Value Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =40V, I=0A 100nA CBO CB E Emitter Cutoff Current I V =4V, I=0A 100nA EBO EB C DC Current Gain h V =2V, I=10mA 300 800 FE CE C Gain-Bandwidth Product f V =10V, I=50mA 500 MHz T CE C Output Capacitance Cob V =10V, f=1MHz 2.8 pF CB Collector to Emitter Saturation V(sat) I =100mA, I=10mA 50 100mV CE C B Voltage Base to Emitter Saturation Voltage V(sat) I =100mA, I=10mA 0.9 1.2V BE C B Collector to Base Breakdown V I =10 A, I=0A 60 V (BR)CBO C E Voltage Collector to Emitter Breakdown V I =1mA, R = 50 V (BR)CEO C BE Voltage 5 Emitter to Base Breakdown Voltage V I =10 A, I =0A V (BR)EBO E C 30 Turn-On Time t ns on See specified Test 340 Storage Time t ns stg Circuit Fall Time 55 t ns f Note 3 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit www.onsemi.com 2