50C02SS-TL-E ON Semiconductor

LOT No. LOT No. Ordering number : EN7519A 50C02SS Bipolar Transistor 50C02SS Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =40V, I =0A 100 nA CBO CB E Emitter Cutoff Current I V =4V, I =0A 100 nA EBO EB C DC Current Gain h V =2V, I =10mA 300 800 FE CE C Gain-Bandwidth Product f V =10V, I =50mA 500 MHz T CE C Output Capacitance Cob V =10V, f=1MHz 2.8 pF CB Collector-to-Emitter Saturation Voltage V (sat) I =100mA, I =10mA 50 100 mV CE C B Base-to-Emitter Saturation Voltage V (sat) I =100mA, I =10mA 0.9 1.2 V BE C B Collector-to-Base Breakdown Voltage V I =10A, I =0A 60 V (BR)CBO C E Collector-to-Emitter Breakdown Voltage V I =1mA, R = 50 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I =10A, I =0A 5 V (BR)EBO E C Turn-ON Time t 30 ns on Storage Time t See speci ed Test Circuit. 340 ns stg Fall Time t 55 ns f Switching Time Test Circuit I B1 PW=20 s OUTPUT D.C.1% I B2 INPUT R V B R R L 50 ++ 220 F 470 F V = --5V V =25V BE CC I =20I = --20I =200mA C B1 B2 Ordering Information Device Package Shipping memo 50C02SS-TL-E SSFP 8,000pcs./reel Pb Free No.7519-2/7