MPSA44
Preferred Device
High Voltage Transistor
NPN Silicon
Features
MPSA44
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (Note 1) V 400 Vdc
(BR)CEO
(I = 1.0 mAdc, I = 0)
C B
CollectorEmitter Breakdown Voltage V 500 Vdc
(BR)CES
(I = 100 Adc, V = 0)
C BE
CollectorBase Breakdown Voltage V 500 Vdc
(BR)CBO
(I = 100 Adc, I = 0)
C E
EmitterBase Breakdown Voltage V 6.0 Vdc
(BR)EBO
(I = 10 Adc, I = 0)
E C
Collector Cutoff Current I 0.1 Adc
CBO
(V = 400 Vdc, I = 0)
CB E
Collector Cutoff Current I 500 nAdc
CES
(V = 400 Vdc, V = 0)
CE BE
Emitter Cutoff Current I 0.1 Adc
EBO
(V = 4.0 Vdc, I = 0)
EB C
ON CHARACTERISTICS (Note 1)
DC Current Gain (Note 1) h
FE
(I = 1.0 mAdc, V = 10 Vdc) 40
C CE
(I = 10 mAdc, V = 10 Vdc) 50 200
C CE
(I = 50 mAdc, V = 10 Vdc) 45
C CE
(I = 100 mAdc, V = 10 Vdc) 40
C CE
CollectorEmitter Saturation Voltage (Note 1) V Vdc
CE(sat)
(I = 1.0 mAdc, I = 0.1 mAdc) 0.4
C B
(I = 10 mAdc, I = 1.0 mAdc) 0.5
C B
(I = 50 mAdc, I = 5.0 mAdc) 0.75
C B
BaseEmitter Saturation Voltage V 0.75 Vdc
BE(sat)
(I = 10 mAdc, I = 1.0 mAdc)
C B
SMALLSIGNAL CHARACTERISTICS
Output Capacitance C 7.0 pF
obo
(V = 20 Vdc, I = 0, f = 1.0 MHz)
CB E
Input Capacitance C 130 pF
ibo
(V = 0.5 Vdc, I = 0, f = 1.0 MHz)
EB C
SmallSignal Current Gain h 1.0
fe
(I = 10 mAdc, V = 10 Vdc, f = 20 MHz)
C CE
1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
ORDERING INFORMATION
Device Package Shipping
MPSA44 TO92 5000 Units / Box
MPSA44G TO92 5000 Units / Box
(PbFree)
MPSA44RL1 TO92 2000 / Tape & Reel
MPSA44RL1G TO92 2000 / Tape & Reel
(PbFree)
MPSA44RLRA TO92 2000 / Tape & Reel
MPSA44RLRAG TO92 2000 / Tape & Reel
(PbFree)
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.