MJ4502
High-Power PNP Silicon
Transistor
This transistor is for use as an output device in complementary audio
amplifiers to 100Watts music power per channel.
MJ4502
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)
C
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (Note 1) V 100 Vdc
(BR)CER
(I = 200 mAdc, R = 100 )
C BE
CollectorEmitter Sustaining Voltage (Note 1) V 90 Vdc
CEO(sus)
(I = 200 mAdc)
C
CollectorBase Cutoff Current I mAdc
CBO
(V = 100 Vdc, I = 0)
CB E 1.0
(V = 100 Vdc, I = 0, T = 150C)
CB E C 5.0
EmitterBase Cutoff Current I 1.0 mAdc
EBO
(V = 4.0 Vdc, I = 0)
BE C
ON CHARACTERISTICS
DC Current Gain h 25 100
FE
(I = 7.5 Adc, V = 2.0 Vdc)
C CE
BaseEmitter On Voltage V 1.3 Vdc
BE(on)
(I = 7.5 Adc, V = 2.0 Vdc)
C CE
CollectorEmitter Saturation Voltage V 0.8 Vdc
CE(sat)
(I = 7.5 Adc, I = 0.75 Adc)
C B
BaseEmitter Saturation Voltage V 1.3 Vdc
BE(sat)
(I = 7.5 Adc, I = 0.75 Adc)
C B
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product f 2.0 MHz
T
(I = 1.0 Adc, V = 10 Vdc, f = 1.0 MHz)
C CE
1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
200
150
100
50
0
0 20 40 60 80 100 120 140 160 180 200
T , CASE TEMPERATURE (C)
C
Figure 1. PowerTemperature Derating Curve