BAT54XV2 Schottky Barrier Diodes These Schottky barrier diodes are designed for highspeed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for handheld and portable applications where space is limited. www.onsemi.com Features 30 VOLT Extremely Fast Switching Speed Low Forward Voltage 0.35 V (Typ) I = 10 mA SILICON HOTCARRIER F S Prefix for Automotive and Other Applications Requiring Unique DETECTOR AND SWITCHING Site and Control Change Requirements AECQ101 Qualified and DIODES PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS 1 2 Compliant CATHODE ANODE 2 SOD523 MAXIMUM RATINGS (T = 125C unless otherwise noted) CASE 502 J 1 Rating Symbol Value Unit Reverse Voltage V 30 V R MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Symbol Max Unit JVM Total Device Dissipation FR5 Board, P 200 mW 1 D (Note 1) T = 25C A JV = Device Code Derate above 25C 1.57 mW/C M = Date Code* Forward Current (DC) I 200 Max mA F = PbFree Package (Note: Microdot may be in either location) NonRepetitive Peak Forward I 600 mA FSM Current, t < 10 msec p *Date Code orientation may vary depending up- on manufacturing location. Repetitive Peak Forward Current I 300 mA FRM Pulse Wave = 1 sec, Duty Cycle = 66% Thermal Resistance, R 635 C/W JA JunctiontoAmbient ORDERING INFORMATION Junction and Storage Temperature T , T 55 to 125 C J stg Device Package Shipping Stresses exceeding those listed in the Maximum Ratings table may damage the BAT54XV2T1G SOD523 3000 / Tape & device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. (PbFree) Reel 1. FR4 Minimum Pad. BAT54XV2T5G SOD523 8000 / Tape & (PbFree) Reel SBAT54XV2T1G SOD523 3000 / Tape & (PbFree) Reel SBAT54XV2T5G SOD523 8000 / Tape & (PbFree) Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: August, 2018 Rev. 12 BAT54XV2T1/DBAT54XV2 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage V 30 V (BR)R (I = 10 A) R Total Capacitance C 7.6 10 pF T (V = 1.0 V, f = 1.0 MHz) R Reverse Leakage I 0.3 2.0 A R (V = 25 V) R Forward Voltage V V F (I = 0.1 mA) 0.22 0.24 F (I = 1.0 mA) 0.28 0.32 F (I = 10 mA) 0.35 0.40 F (I = 30 mA) 0.39 0.50 F (I = 100 mA) 0.46 0.80 F Reverse Recovery Time t 5.0 ns rr (I = I = 10 mA, I = 1.0 mA) Figure 1 F R R(REC) 820 +10 V 2 k 0.1 F I F t t t p I F 100 H r t t 10% 0.1 F rr DUT 90% 50 Output 50 Input i = 1 mA Pulse Sampling R(REC) I R Generator Oscilloscope V R OUTPUT PULSE INPUT SIGNAL (I = I = 10 mA measured F R at i = 1 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 10 mA. F Notes: 2. Input pulse is adjusted so I is equal to 10 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2