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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.BC327 PNP Epitaxial Silicon Transistor
October 2014
BC327
PNP Epitaxial Silicon Transistor
Features
Switching and Amplifier Applications
Suitable for AF-Driver Stages and Low-Power Output Stages
Complement to BC337 / BC338
TO-92
1
1. Collector 2. Base 3. Emitter
Ordering Information
Part Number Top Mark Package Packing Method
BC327BU BC327 TO-92 3L Bulk
BC32716BU BC32716 TO-92 3L Bulk
BC32716TA BC32716 TO-92 3L Ammo
BC32725BU BC32725 TO-92 3L Bulk
BC32725TA BC32725 TO-92 3L Ammo
BC32740BU BC32740 TO-92 3L Bulk
BC32740TA BC32740 TO-92 3L Ammo
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted.
A
Symbol Parameter Value Unit
V Collector-Emitter Voltage -50 V
CES
V Collector-Emitter Voltage -45 V
CEO
V Emitter-Base Voltage -5 V
EBO
I Collector Current (DC) -800 mA
C
T Junction Temperature 150 C
J
T Storage Temperature -55 to 150 C
STG
2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC327 Rev. 1.1.0