X-On Electronics has gained recognition as a prominent supplier of BC32725TA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC32725TA Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC32725TA ON Semiconductor

BC32725TA electronic component of ON Semiconductor
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See Product Specifications
Part No.BC32725TA
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Transistor: PNP; bipolar; 45V; 0.8A; 625mW; TO92
Datasheet: BC32725TA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2000: USD 0.0516 ea
Line Total: USD 103.2 
Availability - 15520
Ship by Thu. 05 Dec to Wed. 11 Dec
MOQ: 2000  Multiples: 2000
Pack Size: 2000
Availability Price Quantity
15520
Ship by Thu. 05 Dec to Wed. 11 Dec
MOQ : 2000
Multiples : 2000
2000 : USD 0.0516
6000 : USD 0.0494
10000 : USD 0.0479
26000 : USD 0.0469
50000 : USD 0.0442
100000 : USD 0.0415
150000 : USD 0.0409
250000 : USD 0.0403

8487
Ship by Thu. 05 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 0.2184
10 : USD 0.1445
100 : USD 0.0728
1000 : USD 0.0646
2000 : USD 0.0489
10000 : USD 0.0424

1083
Ship by Thu. 05 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 0.253
10 : USD 0.2477
25 : USD 0.2422
100 : USD 0.2369
250 : USD 0.2314
500 : USD 0.2259
1000 : USD 0.2206

9700
Ship by Thu. 05 Dec to Wed. 11 Dec
MOQ : 2000
Multiples : 2000
2000 : USD 0.042
6000 : USD 0.042
10000 : USD 0.042
30000 : USD 0.042
50000 : USD 0.042

4668
Ship by Thu. 12 Dec to Tue. 17 Dec
MOQ : 5
Multiples : 5
5 : USD 0.13
50 : USD 0.1
150 : USD 0.0851
500 : USD 0.0738
2000 : USD 0.0571
4000 : USD 0.0525

1840
Ship by Tue. 03 Dec to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 0.252
10 : USD 0.1638
50 : USD 0.14
100 : USD 0.1008
212 : USD 0.0798

1036
Ship by Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.1517
25 : USD 0.0759
100 : USD 0.0683
500 : USD 0.0569
1000 : USD 0.0512

   
Manufacturer
Product Category
Transistor Polarity
Brand
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Kind Of Package
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BC32725TA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC32725TA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC327, BC327-16, BC327-25, BC327-40 Amplifier Transistors PNP Silicon BC327, BC327 16, BC32725, BC32740 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage V Vdc (BR)CEO (I = 10 mA, I = 0) 45 C B Collector Emitter Breakdown Voltage V Vdc (BR)CES (I = 100 A, I = 0) 50 C E Emitter Base Breakdown Voltage V 5.0 Vdc (BR)EBO (I = 10 A, I = 0) E C Collector Cutoff Current I nAdc CBO (V = 30 V, I = 0) 100 CB E Collector Cutoff Current I nAdc CES (V = 45 V, V = 0) 100 CE BE Emitter Cutoff Current I 100 nAdc EBO (V = 4.0 V, I = 0) EB C ON CHARACTERISTICS DC Current Gain h FE (I = 100 mA, V = 1.0 V) BC327 100 630 C CE BC327 16 100 250 BC327 25 160 400 BC327 40 250 630 (I = 300 mA, V = 1.0 V) 40 C CE BaseEmitter On Voltage V 1.2 Vdc BE(on) (I = 300 mA, V = 1.0 V) C CE Collector Emitter Saturation Voltage V 0.7 Vdc CE(sat) (I = 500 mA, I = 50 mA) C B SMALLSIGNAL CHARACTERISTICS Output Capacitance C 11 pF ob (V = 10 V, I = 0, f = 1.0 MHz) CB E Current Gain Bandwidth Product f 260 MHz T (I = 10 mA, V = 5.0 V, f = 100 MHz) C CE 1.0 0.7 D = 0.5 0.5 0.3 0.2 0.2 0.1 (t) = (t) JC JC = 100C/W MAX 0.05 JC 0.1 P (pk) (t) = r(t) 0.02 JA JA 0.07 = 375C/W MAX SINGLE PULSE JA 0.05 t 1 D CURVES APPLY FOR 0.01 POWER 0.03 t SINGLE PULSE 2 PULSE TRAIN SHOWN DUTY CYCLE, D = t /t 0.02 1 2 READ TIME AT t 1 T T = P (t) J(pk) C (pk) JC 0.01 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 t, TIME (SECONDS) Figure 1. Thermal Response

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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