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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.BC337 / BC338 NPN Epitaxial Silicon Transistor September 2015 BC337 / BC338 NPN Epitaxial Silicon Transistor Features Switching and Amplifier Applications TO-92 Suitable for AF-Driver Stages and Low-Power Output Stages 1. Collector 2. Base Complement to BC327 / BC328 1 1 3. Emitter 2 3 2 3 Straight Lead Bent Lead Bulk Packing Tape & Reel Ammo Packing Ordering Information Part Number Top Mark Package Packing Method BC33716BU BC33716 TO-92 3L Bulk BC33716TA BC33716 TO-92 3L Ammo BC33716TFR BC33716 TO-92 3L Tape and Reel BC33725BU BC33725 TO-92 3L Bulk BC33725TA BC33725 TO-92 3L Ammo BC33725TAR BC33725 TO-92 3L Ammo BC33725TF BC33725 TO-92 3L Tape and Reel BC33725TFR BC33725 TO-92 3L Tape and Reel BC33740BU BC33740 TO-92 3L Bulk BC33740TA BC33740 TO-92 3L Ammo BC33825TA BC33825 TO-92 3L Ammo Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted. A Symbol Parameter Value Unit BC337 50 V Collector-Emitter Voltage V CES BC338 30 BC337 45 V Collector-Emitter Voltage V CEO BC338 25 V Emitter-Base Voltage 5 V EBO I Collector Current (DC) 800 mA C T Junction Temperature 150 C J T Storage Temperature -55 to 150 C STG 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com BC337 / BC338 Rev. 1.5